TY - JOUR
T1 - Gate-controlled anisotropy in Aharonov-Casher spin interference
T2 - Signatures of Dresselhaus spin-orbit inversion and spin phases
AU - Nagasawa, Fumiya
AU - Reynoso, Andres A.
AU - Baltanás, José Pablo
AU - Frustaglia, Diego
AU - Saarikoski, Henri
AU - Nitta, Junsaku
N1 - Funding Information:
This work was supported by the Japan Society for the Promotion of Science through Grant-in-Aid for Specially Promoted Research No. 15H05699, Grant-in-Aid for Scientific Research (C) No. 17K05510, Grant-in-Aid for Innovative Areas No. 15K21717, the Core-to-Core Program, and by Projects No. FIS2014-53385-P and No. FIS2017-86478-P (MINECO/FEDER, Spain). D.F. acknowledges additional support from the Marie Sklodowska-Curie Grant Agreement No. 754340 (EU/H2020). The 2D simulations were calculated using the HOKUSAI system provided by the Advanced Center for Computing and Communication (ACCC) at RIKEN. J.N. and F.N. are grateful to Makoto Kohda for valuable discussions.
Publisher Copyright:
© 2018 American Physical Society.
PY - 2018/12/4
Y1 - 2018/12/4
N2 - The coexistence of Rashba and Dresselhaus spin-orbit interactions (SOIs) in semiconductor quantum wells leads to an anisotropic effective field coupled to carriers' spins. We demonstrate a gate-controlled anisotropy in Aharonov-Casher (AC) spin interferometry experiments with InGaAs mesoscopic rings by using an in-plane magnetic field as a probe. Supported by a perturbation-theory approach, we find that the Rashba SOI strength controls the AC resistance anisotropy via spin dynamic and geometric phases and establish ways to manipulate them by employing electric and magnetic tunings. Moreover, assisted by two-dimensional numerical simulations, we identify a remarkable anisotropy inversion in our experiments attributed to a sign change in the renormalized linear Dresselhaus SOI controlled by electrical means, which would open the door to new possibilities for spin manipulation.
AB - The coexistence of Rashba and Dresselhaus spin-orbit interactions (SOIs) in semiconductor quantum wells leads to an anisotropic effective field coupled to carriers' spins. We demonstrate a gate-controlled anisotropy in Aharonov-Casher (AC) spin interferometry experiments with InGaAs mesoscopic rings by using an in-plane magnetic field as a probe. Supported by a perturbation-theory approach, we find that the Rashba SOI strength controls the AC resistance anisotropy via spin dynamic and geometric phases and establish ways to manipulate them by employing electric and magnetic tunings. Moreover, assisted by two-dimensional numerical simulations, we identify a remarkable anisotropy inversion in our experiments attributed to a sign change in the renormalized linear Dresselhaus SOI controlled by electrical means, which would open the door to new possibilities for spin manipulation.
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U2 - 10.1103/PhysRevB.98.245301
DO - 10.1103/PhysRevB.98.245301
M3 - Article
AN - SCOPUS:85057728193
VL - 98
JO - Physical Review B
JF - Physical Review B
SN - 2469-9950
IS - 24
M1 - 245301
ER -