Gate control of spin transport in multilayer graphene

H. Goto; A. Kanda; T. Sato; S. Tanaka; Y. Ootuka; S. Odaka; H. Miyazaki; K. Tsukagoshi; Y. Aoyagi

doi:10.1063/1.2937836

Gate control of spin transport in multilayer graphene

H. Goto, A. Kanda, T. Sato, S. Tanaka, Y. Ootuka, S. Odaka, H. Miyazaki, K. Tsukagoshi, Y. Aoyagi

Research output: Contribution to journal › Article › peer-review

75 Citations (Scopus)

Abstract

We experimentally studied the gate voltage dependence of spin transport in multilayer graphene (MLG) using the nonlocal spin detection technique. We found that the spin signal is a monotonically decreasing linear function of the resistance of MLG, which is characteristic of the intermediate interfacial transparency between the MLG and the ferromagnetic electrodes (Co). The linear relation indicates a large spin relaxation length significantly exceeding 8 μm. This shows the superiority of MLG for the utilization of the graphite-based spintronic devices.

Original language	English
Article number	212110
Journal	Applied Physics Letters
Volume	92
Issue number	21
DOIs	https://doi.org/10.1063/1.2937836
Publication status	Published - 2008
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Gate control of spin transport in multilayer graphene",

abstract = "We experimentally studied the gate voltage dependence of spin transport in multilayer graphene (MLG) using the nonlocal spin detection technique. We found that the spin signal is a monotonically decreasing linear function of the resistance of MLG, which is characteristic of the intermediate interfacial transparency between the MLG and the ferromagnetic electrodes (Co). The linear relation indicates a large spin relaxation length significantly exceeding 8 μm. This shows the superiority of MLG for the utilization of the graphite-based spintronic devices.",

author = "H. Goto and A. Kanda and T. Sato and S. Tanaka and Y. Ootuka and S. Odaka and H. Miyazaki and K. Tsukagoshi and Y. Aoyagi",

note = "Funding Information: This work is partly supported by the Inter-university Cooperative Research Program of the Institute for Materials Research, Tohoku University and Grants-in-Aid for Scientific Research (18201028, 19651044, and 16GS50219) from the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan.",

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doi = "10.1063/1.2937836",

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TY - JOUR

T1 - Gate control of spin transport in multilayer graphene

AU - Goto, H.

AU - Kanda, A.

AU - Sato, T.

AU - Tanaka, S.

AU - Ootuka, Y.

AU - Odaka, S.

AU - Miyazaki, H.

AU - Tsukagoshi, K.

AU - Aoyagi, Y.

N1 - Funding Information: This work is partly supported by the Inter-university Cooperative Research Program of the Institute for Materials Research, Tohoku University and Grants-in-Aid for Scientific Research (18201028, 19651044, and 16GS50219) from the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan.

PY - 2008

Y1 - 2008

N2 - We experimentally studied the gate voltage dependence of spin transport in multilayer graphene (MLG) using the nonlocal spin detection technique. We found that the spin signal is a monotonically decreasing linear function of the resistance of MLG, which is characteristic of the intermediate interfacial transparency between the MLG and the ferromagnetic electrodes (Co). The linear relation indicates a large spin relaxation length significantly exceeding 8 μm. This shows the superiority of MLG for the utilization of the graphite-based spintronic devices.

AB - We experimentally studied the gate voltage dependence of spin transport in multilayer graphene (MLG) using the nonlocal spin detection technique. We found that the spin signal is a monotonically decreasing linear function of the resistance of MLG, which is characteristic of the intermediate interfacial transparency between the MLG and the ferromagnetic electrodes (Co). The linear relation indicates a large spin relaxation length significantly exceeding 8 μm. This shows the superiority of MLG for the utilization of the graphite-based spintronic devices.

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Gate control of spin transport in multilayer graphene

Abstract

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