Gate control of spin-orbit interaction in an InAs-inserted In0.53Ga0.47As/In0.52Al0.48As heterostructure

Junsaku Nitta, Tatsushi Akazaki, Hideaki Takayanagi, Takatomo Enoki

Research output: Contribution to journalArticlepeer-review

25 Citations (Scopus)

Abstract

We have confirmed by analyzing beating patterns of Shubnikov-de Haas oscillations that a spin-orbit interaction of the conduction band in an InAs-inserted In0.53Ga0.47As/In0.52Al0.48As heterostructure can be controlled by applying the gate voltage. The change in the spin-orbit interaction can be attributed to the Rashba term. Comparison with an In0.53Ga0.47As/In0.52Al0.48As heterostructure reveals that the spin-orbit interaction in the InAs-inserted system is more sensitive to the carrier concentration.

Original languageEnglish
Pages (from-to)527-531
Number of pages5
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume2
Issue number1-4
DOIs
Publication statusPublished - 1998 Jul 15
Externally publishedYes

Keywords

  • InAs-inserted InGaAs/InAlAs heterostructure
  • InGaAs/InAlAs heterostructure
  • Spin-orbit interaction

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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