Abstract
We have confirmed by analyzing beating patterns of Shubnikov-de Haas oscillations that a spin-orbit interaction of the conduction band in an InAs-inserted In0.53Ga0.47As/In0.52Al0.48As heterostructure can be controlled by applying the gate voltage. The change in the spin-orbit interaction can be attributed to the Rashba term. Comparison with an In0.53Ga0.47As/In0.52Al0.48As heterostructure reveals that the spin-orbit interaction in the InAs-inserted system is more sensitive to the carrier concentration.
Original language | English |
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Pages (from-to) | 527-531 |
Number of pages | 5 |
Journal | Physica E: Low-Dimensional Systems and Nanostructures |
Volume | 2 |
Issue number | 1-4 |
DOIs | |
Publication status | Published - 1998 Jul 15 |
Externally published | Yes |
Keywords
- InAs-inserted InGaAs/InAlAs heterostructure
- InGaAs/InAlAs heterostructure
- Spin-orbit interaction
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics