Gate control of spin-orbit interaction in an InAs-inserted In0.53Ga0.47As/In0.52Al0.48As heterostructure

Junsaku Nitta; Tatsushi Akazaki; Hideaki Takayanagi; Takatomo Enoki

doi:10.1016/S1386-9477(98)00109-X

Gate control of spin-orbit interaction in an InAs-inserted In_0.53Ga_0.47As/In_0.52Al_0.48As heterostructure

Junsaku Nitta, Tatsushi Akazaki, Hideaki Takayanagi, Takatomo Enoki

Research output: Contribution to journal › Article › peer-review

26 Citations (Scopus)

Abstract

We have confirmed by analyzing beating patterns of Shubnikov-de Haas oscillations that a spin-orbit interaction of the conduction band in an InAs-inserted In_0.53Ga_0.47As/In_0.52Al_0.48As heterostructure can be controlled by applying the gate voltage. The change in the spin-orbit interaction can be attributed to the Rashba term. Comparison with an In_0.53Ga_0.47As/In_0.52Al_0.48As heterostructure reveals that the spin-orbit interaction in the InAs-inserted system is more sensitive to the carrier concentration.

Original language	English
Pages (from-to)	527-531
Number of pages	5
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	2
Issue number	1-4
DOIs	https://doi.org/10.1016/S1386-9477(98)00109-X
Publication status	Published - 1998 Jul 15
Externally published	Yes

Keywords

InAs-inserted InGaAs/InAlAs heterostructure
InGaAs/InAlAs heterostructure
Spin-orbit interaction

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

Access to Document

10.1016/S1386-9477(98)00109-X

Cite this

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title = "Gate control of spin-orbit interaction in an InAs-inserted In0.53Ga0.47As/In0.52Al0.48As heterostructure",

abstract = "We have confirmed by analyzing beating patterns of Shubnikov-de Haas oscillations that a spin-orbit interaction of the conduction band in an InAs-inserted In0.53Ga0.47As/In0.52Al0.48As heterostructure can be controlled by applying the gate voltage. The change in the spin-orbit interaction can be attributed to the Rashba term. Comparison with an In0.53Ga0.47As/In0.52Al0.48As heterostructure reveals that the spin-orbit interaction in the InAs-inserted system is more sensitive to the carrier concentration.",

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T1 - Gate control of spin-orbit interaction in an InAs-inserted In0.53Ga0.47As/In0.52Al0.48As heterostructure

AU - Nitta, Junsaku

AU - Akazaki, Tatsushi

AU - Takayanagi, Hideaki

AU - Enoki, Takatomo

PY - 1998/7/15

Y1 - 1998/7/15

N2 - We have confirmed by analyzing beating patterns of Shubnikov-de Haas oscillations that a spin-orbit interaction of the conduction band in an InAs-inserted In0.53Ga0.47As/In0.52Al0.48As heterostructure can be controlled by applying the gate voltage. The change in the spin-orbit interaction can be attributed to the Rashba term. Comparison with an In0.53Ga0.47As/In0.52Al0.48As heterostructure reveals that the spin-orbit interaction in the InAs-inserted system is more sensitive to the carrier concentration.

AB - We have confirmed by analyzing beating patterns of Shubnikov-de Haas oscillations that a spin-orbit interaction of the conduction band in an InAs-inserted In0.53Ga0.47As/In0.52Al0.48As heterostructure can be controlled by applying the gate voltage. The change in the spin-orbit interaction can be attributed to the Rashba term. Comparison with an In0.53Ga0.47As/In0.52Al0.48As heterostructure reveals that the spin-orbit interaction in the InAs-inserted system is more sensitive to the carrier concentration.

KW - InAs-inserted InGaAs/InAlAs heterostructure

KW - InGaAs/InAlAs heterostructure

KW - Spin-orbit interaction

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