Gate control of electronic phases in a quarter-filled manganite

T. Hatano, Y. Ogimoto, N. Ogawa, M. Nakano, S. Ono, Y. Tomioka, K. Miyano, Y. Iwasa, Y. Tokura

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26 Citations (Scopus)

Abstract

Electron correlation often produces a variety of electrically insulating states caused by self-organization of electrons, which are particularly stable at commensurate fillings. Although collapsing such ordered states by minute external stimuli has been a key strategy toward device applications, it is difficult to access their true electronic phase boundaries due to the necessity of fine-tuning of material parameters. Here, we demonstrate the ambipolar resistance switching in Pr 1-x Sr x MnO 3 thin films (x = 0.5; an effectively 1/4-filled state) by quasi-continuous control of the doping level x and band-width W using gate-voltage and magnetic field, enabled by the extreme electric-field formed at the nanoscale interface generated in an electrolyte-gated transistor. An electroresistance peak with unprecedented steepness emerges on approaching a critical point in the x-W phase diagram. The technique opens a new route to Mott-insulator based transistors and to discovering singularities hitherto unnoticed in conventional bulk studies of strongly correlated electron systems.

Original languageEnglish
Article number2904
JournalScientific reports
Volume3
DOIs
Publication statusPublished - 2013 Oct 18

ASJC Scopus subject areas

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    Hatano, T., Ogimoto, Y., Ogawa, N., Nakano, M., Ono, S., Tomioka, Y., Miyano, K., Iwasa, Y., & Tokura, Y. (2013). Gate control of electronic phases in a quarter-filled manganite. Scientific reports, 3, [2904]. https://doi.org/10.1038/srep02904