Gate control of electronic phases in a quarter-filled manganite

T. Hatano, Y. Ogimoto, N. Ogawa, M. Nakano, S. Ono, Y. Tomioka, K. Miyano, Y. Iwasa, Y. Tokura

Research output: Contribution to journalArticlepeer-review

30 Citations (Scopus)


Electron correlation often produces a variety of electrically insulating states caused by self-organization of electrons, which are particularly stable at commensurate fillings. Although collapsing such ordered states by minute external stimuli has been a key strategy toward device applications, it is difficult to access their true electronic phase boundaries due to the necessity of fine-tuning of material parameters. Here, we demonstrate the ambipolar resistance switching in Pr 1-x Sr x MnO 3 thin films (x = 0.5; an effectively 1/4-filled state) by quasi-continuous control of the doping level x and band-width W using gate-voltage and magnetic field, enabled by the extreme electric-field formed at the nanoscale interface generated in an electrolyte-gated transistor. An electroresistance peak with unprecedented steepness emerges on approaching a critical point in the x-W phase diagram. The technique opens a new route to Mott-insulator based transistors and to discovering singularities hitherto unnoticed in conventional bulk studies of strongly correlated electron systems.

Original languageEnglish
Article number2904
JournalScientific reports
Publication statusPublished - 2013
Externally publishedYes

ASJC Scopus subject areas

  • General


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