TY - JOUR
T1 - Gas-source molecular beam epitaxy of Si(111) on Si(110) substrates by insertion of 3C-SiC(111) interlayer for hybrid orientation technology
AU - Bantaculo, Rolando
AU - Saitoh, Eiji
AU - Miyamoto, Yu
AU - Handa, Hiroyuki
AU - Suemitsu, Maki
N1 - Funding Information:
This work has been partly carried out at the Evaluation Division of Fundamental Technology Center, Research Institute of Electrical Communication, Tohoku University and supported by the JSPS KAKENHI (21360017) and the Tohoku University Electro-Related Departments Global COE Program.
PY - 2011/11/1
Y1 - 2011/11/1
N2 - A method to realize a novel hybrid orientations of Si surfaces, Si(111) on Si(110), has been developed by use of a Si(111)/3C-SiC(111)/Si(110) trilayer structure. This technology allows us to use the Si(111) portion for the n-type and the Si(110) portion for the p-type channels, providing a solution to the current drive imbalance between the two channels confronted in Si(100)-based complementary metal oxide semiconductor (CMOS) technology. The central idea is to use a rotated heteroepitaxy of 3C-SiC(111) on Si(110) substrate, which occurs when a 3C-SiC film is grown under certain growth conditions. Monomethylsilane (SiH3-CH3) gas-source molecular beam epitaxy (GSMBE) is used for this 3C-SiC interlayer formation while disilane (Si2H 6) is used for the top Si(111) layer formation. Though the film quality of the Si epilayer leaves a lot of room for betterment, the present results may suffice to prove its potential as a new technology to be used in the next generation CMOS devices.
AB - A method to realize a novel hybrid orientations of Si surfaces, Si(111) on Si(110), has been developed by use of a Si(111)/3C-SiC(111)/Si(110) trilayer structure. This technology allows us to use the Si(111) portion for the n-type and the Si(110) portion for the p-type channels, providing a solution to the current drive imbalance between the two channels confronted in Si(100)-based complementary metal oxide semiconductor (CMOS) technology. The central idea is to use a rotated heteroepitaxy of 3C-SiC(111) on Si(110) substrate, which occurs when a 3C-SiC film is grown under certain growth conditions. Monomethylsilane (SiH3-CH3) gas-source molecular beam epitaxy (GSMBE) is used for this 3C-SiC interlayer formation while disilane (Si2H 6) is used for the top Si(111) layer formation. Though the film quality of the Si epilayer leaves a lot of room for betterment, the present results may suffice to prove its potential as a new technology to be used in the next generation CMOS devices.
KW - 3C-SiC(111)/3C-SiC(111)/Si(110) trilayer structure
KW - Disilane
KW - Gas source molecular beam epitaxy
KW - Hybrid orientation technology
KW - Monomethylsilane
UR - http://www.scopus.com/inward/record.url?scp=80755128345&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=80755128345&partnerID=8YFLogxK
U2 - 10.1016/j.tsf.2011.06.090
DO - 10.1016/j.tsf.2011.06.090
M3 - Article
AN - SCOPUS:80755128345
VL - 520
SP - 730
EP - 733
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
IS - 2
ER -