Gas-source molecular beam epitaxy of Si(111) on Si(110) substrates by insertion of 3C-SiC(111) interlayer for hybrid orientation technology

Rolando Bantaculo, Eiji Saitoh, Yu Miyamoto, Hiroyuki Handa, Maki Suemitsu

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

A method to realize a novel hybrid orientations of Si surfaces, Si(111) on Si(110), has been developed by use of a Si(111)/3C-SiC(111)/Si(110) trilayer structure. This technology allows us to use the Si(111) portion for the n-type and the Si(110) portion for the p-type channels, providing a solution to the current drive imbalance between the two channels confronted in Si(100)-based complementary metal oxide semiconductor (CMOS) technology. The central idea is to use a rotated heteroepitaxy of 3C-SiC(111) on Si(110) substrate, which occurs when a 3C-SiC film is grown under certain growth conditions. Monomethylsilane (SiH3-CH3) gas-source molecular beam epitaxy (GSMBE) is used for this 3C-SiC interlayer formation while disilane (Si2H 6) is used for the top Si(111) layer formation. Though the film quality of the Si epilayer leaves a lot of room for betterment, the present results may suffice to prove its potential as a new technology to be used in the next generation CMOS devices.

Original languageEnglish
Pages (from-to)730-733
Number of pages4
JournalThin Solid Films
Volume520
Issue number2
DOIs
Publication statusPublished - 2011 Nov 1

Keywords

  • 3C-SiC(111)/3C-SiC(111)/Si(110) trilayer structure
  • Disilane
  • Gas source molecular beam epitaxy
  • Hybrid orientation technology
  • Monomethylsilane

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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