Gas-source MBE of SiC/Si using monomethylsilane

Hideki Nakazawa, Maki Suemitsu, Seiji Asami

Research output: Contribution to journalConference article

26 Citations (Scopus)

Abstract

We have conducted a systematic series of gas-source MBE experiments of 3C-SiC on Si(100) using monomethylsilane (MMS), and have investigated the relation between growth parameters (MMS pressure and growth temperature) and the grown film quality using atomic force microscopy, X-ray diffraction, Fourier transform infrared spectroscopy, and Auger electron spectroscopy. As a result, it was clarified that there exists a set of optimum growth parameters for the best surface morphology and crystallinity. The optimum temperature lowered with decreasing MMS pressure, and the crystallinity of the SiC film improved at the same time. In particular, a high quality 3C-SiC film on Si(100) was successfully grown at T = 900 °C.

Original languageEnglish
Pages (from-to)269-272
Number of pages4
JournalThin Solid Films
Volume369
Issue number1
DOIs
Publication statusPublished - 2000 Jul 3
EventThe International Joint Conference on Silicon Epitaxyand Heterostructures (IJC-SI) - Miyagi, Jpn
Duration: 1999 Sep 121999 Sep 17

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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