Gas absorption in package using Au/Pt/Ti bonding layer

Takashi Matsumae, Shingo Kariya, Yuichi Kurashima, Hideki Takagi, Masanori Hayase, Eiji Higurashi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

A packaged environment was fabricated by bonding substrates with the Au/Pt/Ti layers. By annealing the package at 450 °C, Ti diffused through the Pt and Au layers and reacted with gas molecules at the inner surface. These results suggested that a cap wafer metalized the Au/Pt/Ti layer can form hermetic sealing with a device substrate and also absorb the residual gas in the package by the high-temperature annealing. It is believed the proposed technique would contribute to simplified vacuum packaging processes because the Au/Pt/Ti layers can be utilized as the bonding and gettering films.

Original languageEnglish
Title of host publicationPRiME 2020
Subtitle of host publicationSemiconductor Wafer Bonding: Science, Technology, and Applications 16
EditorsR. Knechtel, C. S. Tan, T. Suga, H. Baumgart, M. S. Goorsky, F. Fournel, K. D. Hobart, F. Roozeboom
PublisherIOP Publishing Ltd.
Pages211-215
Number of pages5
Edition4
ISBN (Electronic)9781607688990
DOIs
Publication statusPublished - 2020
Externally publishedYes
EventPacific Rim Meeting on Electrochemical and Solid State Science 2020, PRiME 200 - Honolulu, United States
Duration: 2020 Oct 42020 Oct 9

Publication series

NameECS Transactions
Number4
Volume98
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Conference

ConferencePacific Rim Meeting on Electrochemical and Solid State Science 2020, PRiME 200
Country/TerritoryUnited States
CityHonolulu
Period20/10/420/10/9

ASJC Scopus subject areas

  • Engineering(all)

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