Gas absorption in package using Au/Pt/Ti bonding layer

Takashi Matsumae, Shingo Kariya, Yuichi Kurashima, Hideki Takagi, Masanori Hayase, Eiji Higurashi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)


A packaged environment was fabricated by bonding substrates with the Au/Pt/Ti layers. By annealing the package at 450 °C, Ti diffused through the Pt and Au layers and reacted with gas molecules at the inner surface. These results suggested that a cap wafer metalized the Au/Pt/Ti layer can form hermetic sealing with a device substrate and also absorb the residual gas in the package by the high-temperature annealing. It is believed the proposed technique would contribute to simplified vacuum packaging processes because the Au/Pt/Ti layers can be utilized as the bonding and gettering films.

Original languageEnglish
Title of host publicationPRiME 2020
Subtitle of host publicationSemiconductor Wafer Bonding: Science, Technology, and Applications 16
EditorsR. Knechtel, C. S. Tan, T. Suga, H. Baumgart, M. S. Goorsky, F. Fournel, K. D. Hobart, F. Roozeboom
PublisherIOP Publishing Ltd.
Number of pages5
ISBN (Electronic)9781607688990
Publication statusPublished - 2020
Externally publishedYes
EventPacific Rim Meeting on Electrochemical and Solid State Science 2020, PRiME 200 - Honolulu, United States
Duration: 2020 Oct 42020 Oct 9

Publication series

NameECS Transactions
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862


ConferencePacific Rim Meeting on Electrochemical and Solid State Science 2020, PRiME 200
Country/TerritoryUnited States

ASJC Scopus subject areas

  • Engineering(all)


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