TY - JOUR
T1 - GaNAs(001) surface phases under growing condition
AU - Mori, Takahiro
AU - Morimura, Toshiharu
AU - Hanada, Takashi
AU - Yao, Takafumi
N1 - Funding Information:
This study was supported by JSPS Research Fellowships for Young Scientists.
PY - 2005
Y1 - 2005
N2 - GaNAsGaAs (001) growth surfaces were investigated by reflectance difference (RD)anisotropy spectroscopy. In situ monitoring was carried out in a plasma-assisted molecular-beam epitaxy system during growth. In the growth temperature range of our experiment, the reflection high-energy electron diffraction pattern always showed a (2×4) reconstruction pattern, however, we observed three types of RD spectra. It was suggested that the GaNAs growth surface has three phases because RD spectra properly reflect surface electronic states. It is revealed that the phases are independent from nitrogen concentration, but dependent upon growth temperature and As4 Ga flux ratio. In this article, we show the results of the RD observation, present a phase diagram, and discuss possible GaNAs growth surfaces.
AB - GaNAsGaAs (001) growth surfaces were investigated by reflectance difference (RD)anisotropy spectroscopy. In situ monitoring was carried out in a plasma-assisted molecular-beam epitaxy system during growth. In the growth temperature range of our experiment, the reflection high-energy electron diffraction pattern always showed a (2×4) reconstruction pattern, however, we observed three types of RD spectra. It was suggested that the GaNAs growth surface has three phases because RD spectra properly reflect surface electronic states. It is revealed that the phases are independent from nitrogen concentration, but dependent upon growth temperature and As4 Ga flux ratio. In this article, we show the results of the RD observation, present a phase diagram, and discuss possible GaNAs growth surfaces.
UR - http://www.scopus.com/inward/record.url?scp=31144451581&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=31144451581&partnerID=8YFLogxK
U2 - 10.1116/1.1894416
DO - 10.1116/1.1894416
M3 - Article
AN - SCOPUS:31144451581
VL - 23
SP - 1341
EP - 1344
JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
SN - 1071-1023
IS - 3
ER -