GaNAs(001) surface phases under growing condition

Takahiro Mori; Toshiharu Morimura; Takashi Hanada; Takafumi Yao

doi:10.1116/1.1894416

GaNAs(001) surface phases under growing condition

Takahiro Mori, Toshiharu Morimura, Takashi Hanada, Takafumi Yao

Research output: Contribution to journal › Article › peer-review

Abstract

GaNAsGaAs (001) growth surfaces were investigated by reflectance difference (RD)anisotropy spectroscopy. In situ monitoring was carried out in a plasma-assisted molecular-beam epitaxy system during growth. In the growth temperature range of our experiment, the reflection high-energy electron diffraction pattern always showed a (2×4) reconstruction pattern, however, we observed three types of RD spectra. It was suggested that the GaNAs growth surface has three phases because RD spectra properly reflect surface electronic states. It is revealed that the phases are independent from nitrogen concentration, but dependent upon growth temperature and As4 Ga flux ratio. In this article, we show the results of the RD observation, present a phase diagram, and discuss possible GaNAs growth surfaces.

Original language	English
Pages (from-to)	1341-1344
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	23
Issue number	3
DOIs	https://doi.org/10.1116/1.1894416
Publication status	Published - 2005 Dec 1
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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abstract = "GaNAsGaAs (001) growth surfaces were investigated by reflectance difference (RD)anisotropy spectroscopy. In situ monitoring was carried out in a plasma-assisted molecular-beam epitaxy system during growth. In the growth temperature range of our experiment, the reflection high-energy electron diffraction pattern always showed a (2×4) reconstruction pattern, however, we observed three types of RD spectra. It was suggested that the GaNAs growth surface has three phases because RD spectra properly reflect surface electronic states. It is revealed that the phases are independent from nitrogen concentration, but dependent upon growth temperature and As4 Ga flux ratio. In this article, we show the results of the RD observation, present a phase diagram, and discuss possible GaNAs growth surfaces.",

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AU - Mori, Takahiro

AU - Morimura, Toshiharu

AU - Hanada, Takashi

AU - Yao, Takafumi

PY - 2005/12/1

Y1 - 2005/12/1

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AB - GaNAsGaAs (001) growth surfaces were investigated by reflectance difference (RD)anisotropy spectroscopy. In situ monitoring was carried out in a plasma-assisted molecular-beam epitaxy system during growth. In the growth temperature range of our experiment, the reflection high-energy electron diffraction pattern always showed a (2×4) reconstruction pattern, however, we observed three types of RD spectra. It was suggested that the GaNAs growth surface has three phases because RD spectra properly reflect surface electronic states. It is revealed that the phases are independent from nitrogen concentration, but dependent upon growth temperature and As4 Ga flux ratio. In this article, we show the results of the RD observation, present a phase diagram, and discuss possible GaNAs growth surfaces.

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