Abstract
GaN single crystals were synthesized at 750-775 °C and 5MPa of N2 for 200-300 h using Na-Ga melts with the mole fractions of Na/(Ga+Na) of 0.60-0.67 in the starting melt. When 99% pure Na was used, almost all the melt surface was covered with a GaN polycrystalline layer which prevented the single crystal growth. By using 99.95% Na, no polycrystalline layer formed and GaN single crystals of 0.8-1.0 mm grew on the bottom of a sintered BN crucible. A platelet single crystal having a size of 10 mm in the longest direction and 0.1 mm thick was obtained in a pyrolytic BN crucible using Na purified by distillation of the 99.95% Na.
| Original language | English |
|---|---|
| Pages (from-to) | 70-76 |
| Number of pages | 7 |
| Journal | Journal of Crystal Growth |
| Volume | 242 |
| Issue number | 1-2 |
| DOIs | |
| Publication status | Published - 2002 Jul 1 |
Keywords
- A2. Growth form solution
- A2. Simple Crystal
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry
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Aoki, M., Yamane, H., Shimada, M., Sarayama, S., & DiSalvo, F. J. (2002). GaN single crystal growth using high-purity Na as a flux. Journal of Crystal Growth, 242(1-2), 70-76. https://doi.org/10.1016/S0022-0248(02)01349-0