GaN single crystal growth using high-purity Na as a flux

Masato Aoki, Hisanori Yamane, Masahiko Shimada, Seiji Sarayama, Francis J. DiSalvo

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    74 Citations (Scopus)


    GaN single crystals were synthesized at 750-775 °C and 5MPa of N2 for 200-300 h using Na-Ga melts with the mole fractions of Na/(Ga+Na) of 0.60-0.67 in the starting melt. When 99% pure Na was used, almost all the melt surface was covered with a GaN polycrystalline layer which prevented the single crystal growth. By using 99.95% Na, no polycrystalline layer formed and GaN single crystals of 0.8-1.0 mm grew on the bottom of a sintered BN crucible. A platelet single crystal having a size of 10 mm in the longest direction and 0.1 mm thick was obtained in a pyrolytic BN crucible using Na purified by distillation of the 99.95% Na.

    Original languageEnglish
    Pages (from-to)70-76
    Number of pages7
    JournalJournal of Crystal Growth
    Issue number1-2
    Publication statusPublished - 2002 Jul


    • A2. Growth form solution
    • A2. Simple Crystal

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Inorganic Chemistry
    • Materials Chemistry


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