TY - JOUR
T1 - GaN single crystal growth using high-purity Na as a flux
AU - Aoki, Masato
AU - Yamane, Hisanori
AU - Shimada, Masahiko
AU - Sarayama, Seiji
AU - DiSalvo, Francis J.
N1 - Funding Information:
We are grateful to Nippon Soda Co. Ltd. for a gift of high-purity Na. This work was supported in part by a grant from the Ministry of Education, Culture, Sports, Science and Technology.
PY - 2002/7
Y1 - 2002/7
N2 - GaN single crystals were synthesized at 750-775 °C and 5MPa of N2 for 200-300 h using Na-Ga melts with the mole fractions of Na/(Ga+Na) of 0.60-0.67 in the starting melt. When 99% pure Na was used, almost all the melt surface was covered with a GaN polycrystalline layer which prevented the single crystal growth. By using 99.95% Na, no polycrystalline layer formed and GaN single crystals of 0.8-1.0 mm grew on the bottom of a sintered BN crucible. A platelet single crystal having a size of 10 mm in the longest direction and 0.1 mm thick was obtained in a pyrolytic BN crucible using Na purified by distillation of the 99.95% Na.
AB - GaN single crystals were synthesized at 750-775 °C and 5MPa of N2 for 200-300 h using Na-Ga melts with the mole fractions of Na/(Ga+Na) of 0.60-0.67 in the starting melt. When 99% pure Na was used, almost all the melt surface was covered with a GaN polycrystalline layer which prevented the single crystal growth. By using 99.95% Na, no polycrystalline layer formed and GaN single crystals of 0.8-1.0 mm grew on the bottom of a sintered BN crucible. A platelet single crystal having a size of 10 mm in the longest direction and 0.1 mm thick was obtained in a pyrolytic BN crucible using Na purified by distillation of the 99.95% Na.
KW - A2. Growth form solution
KW - A2. Simple Crystal
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U2 - 10.1016/S0022-0248(02)01349-0
DO - 10.1016/S0022-0248(02)01349-0
M3 - Article
AN - SCOPUS:0036643610
VL - 242
SP - 70
EP - 76
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 1-2
ER -