GaN pitch-variable grating fabricated on Si substrate

H. Sameshima; T. Tanae; F. Hu; Kazuhiro Hane

doi:10.1109/OMEMS.2010.5672174

GaN pitch-variable grating fabricated on Si substrate

H. Sameshima, T. Tanae, F. Hu, Kazuhiro Hane

ENG - Finemechanics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Citations (Scopus)

Abstract

A tunable grating is fabricated by micromachining a GaN crystal layer grown on Si substrate. The tunable grating consists of grating lines, electro-static comb-drive actuator and connection springs. The grating consists of 85nm wide, 12μm long 24 grating lines with 674nm period. The crystallization stress of an HfO₂ layer deposited on the GaN crystal is used to compensate the residual stress of the GaN crystal grown on Si substrate. The freestanding GaN structure consisting of the grating and the actuator is fabricated by etching the Si substrate with XeF₂ gas. Applying the voltage of 140V, the grating is expanded by 600nm corresponding to the period change of 3.7%.

Original language	English
Title of host publication	2010 International Conference on Optical MEMS and Nanophotonics, Optical MEMS and Nanophotonics 2010
Pages	79-80
Number of pages	2
DOIs	https://doi.org/10.1109/OMEMS.2010.5672174
Publication status	Published - 2010 Dec 1
Event	2010 International Conference on Optical MEMS and Nanophotonics, Optical MEMS and Nanophotonics 2010 - Sapporo, Japan Duration: 2010 Aug 9 → 2010 Aug 12

Publication series

Name	2010 International Conference on Optical MEMS and Nanophotonics, Optical MEMS and Nanophotonics 2010

Other

Other	2010 International Conference on Optical MEMS and Nanophotonics, Optical MEMS and Nanophotonics 2010
Country/Territory	Japan
City	Sapporo
Period	10/8/9 → 10/8/12

ASJC Scopus subject areas

Control and Systems Engineering
Electrical and Electronic Engineering

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10.1109/OMEMS.2010.5672174

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Sameshima, H., Tanae, T., Hu, F., & Hane, K. (2010). GaN pitch-variable grating fabricated on Si substrate. In 2010 International Conference on Optical MEMS and Nanophotonics, Optical MEMS and Nanophotonics 2010 (pp. 79-80). [5672174] (2010 International Conference on Optical MEMS and Nanophotonics, Optical MEMS and Nanophotonics 2010). https://doi.org/10.1109/OMEMS.2010.5672174

GaN pitch-variable grating fabricated on Si substrate. / Sameshima, H.; Tanae, T.; Hu, F. et al.

2010 International Conference on Optical MEMS and Nanophotonics, Optical MEMS and Nanophotonics 2010. 2010. p. 79-80 5672174 (2010 International Conference on Optical MEMS and Nanophotonics, Optical MEMS and Nanophotonics 2010).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Sameshima, H, Tanae, T, Hu, F & Hane, K 2010, GaN pitch-variable grating fabricated on Si substrate. in 2010 International Conference on Optical MEMS and Nanophotonics, Optical MEMS and Nanophotonics 2010., 5672174, 2010 International Conference on Optical MEMS and Nanophotonics, Optical MEMS and Nanophotonics 2010, pp. 79-80, 2010 International Conference on Optical MEMS and Nanophotonics, Optical MEMS and Nanophotonics 2010, Sapporo, Japan, 10/8/9. https://doi.org/10.1109/OMEMS.2010.5672174

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title = "GaN pitch-variable grating fabricated on Si substrate",

abstract = "A tunable grating is fabricated by micromachining a GaN crystal layer grown on Si substrate. The tunable grating consists of grating lines, electro-static comb-drive actuator and connection springs. The grating consists of 85nm wide, 12μm long 24 grating lines with 674nm period. The crystallization stress of an HfO2 layer deposited on the GaN crystal is used to compensate the residual stress of the GaN crystal grown on Si substrate. The freestanding GaN structure consisting of the grating and the actuator is fabricated by etching the Si substrate with XeF2 gas. Applying the voltage of 140V, the grating is expanded by 600nm corresponding to the period change of 3.7%.",

author = "H. Sameshima and T. Tanae and F. Hu and Kazuhiro Hane",

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AU - Sameshima, H.

AU - Tanae, T.

AU - Hu, F.

AU - Hane, Kazuhiro

PY - 2010/12/1

Y1 - 2010/12/1

N2 - A tunable grating is fabricated by micromachining a GaN crystal layer grown on Si substrate. The tunable grating consists of grating lines, electro-static comb-drive actuator and connection springs. The grating consists of 85nm wide, 12μm long 24 grating lines with 674nm period. The crystallization stress of an HfO2 layer deposited on the GaN crystal is used to compensate the residual stress of the GaN crystal grown on Si substrate. The freestanding GaN structure consisting of the grating and the actuator is fabricated by etching the Si substrate with XeF2 gas. Applying the voltage of 140V, the grating is expanded by 600nm corresponding to the period change of 3.7%.

AB - A tunable grating is fabricated by micromachining a GaN crystal layer grown on Si substrate. The tunable grating consists of grating lines, electro-static comb-drive actuator and connection springs. The grating consists of 85nm wide, 12μm long 24 grating lines with 674nm period. The crystallization stress of an HfO2 layer deposited on the GaN crystal is used to compensate the residual stress of the GaN crystal grown on Si substrate. The freestanding GaN structure consisting of the grating and the actuator is fabricated by etching the Si substrate with XeF2 gas. Applying the voltage of 140V, the grating is expanded by 600nm corresponding to the period change of 3.7%.

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ER -

GaN pitch-variable grating fabricated on Si substrate

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