GaN nanodot fabrication by implant source growth

R. Buckmaster, J. H. Yoo, K. Shin, Y. Yao, T. Sekiguchi, M. Yokoyama, T. Hanada, T. Goto, M. Cho, Y. Kawazoe, T. Yao

Research output: Contribution to journalConference article

3 Citations (Scopus)

Abstract

By using implant source growth, an ion beam synthesis technique where implanted ions are used as a growth source for nanostructures, we have fabricated self-assembled GaN nanodots on SiO2. The fabrication method consists of implanting Ga ions into a 60 nm thick thermally grown SiO2 layer by using a focused ion beam system followed by annealing under an NH3 flux. The morphology, crystal structure, and optical properties of the GaN nanodots are also shown and discussed.

Original languageEnglish
Pages (from-to)456-459
Number of pages4
JournalMicroelectronics Journal
Volume36
Issue number3-6
DOIs
Publication statusPublished - 2005 Mar 1

Keywords

  • GaN
  • Ion beam synthesis
  • Nanodot
  • Self-assembly

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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  • Cite this

    Buckmaster, R., Yoo, J. H., Shin, K., Yao, Y., Sekiguchi, T., Yokoyama, M., Hanada, T., Goto, T., Cho, M., Kawazoe, Y., & Yao, T. (2005). GaN nanodot fabrication by implant source growth. Microelectronics Journal, 36(3-6), 456-459. https://doi.org/10.1016/j.mejo.2005.02.046