GaN-LED grown on SI substrate by MBE/MOCVD and monolithic fabrication of a light distribution variable device

M. Wakui, R. Ito, H. Sameshima, F. R. Hu, K. Hane

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Monolithic integration of GaN-based semiconductor with Si MEMS is demonstrated from a GaN/Si wafer, in which GaN crystal is grown by molecular beam epitaxy (MBE). A Light emitting diode is fabricated on the grown GaN crystal and the blue electro-luminescence is obtained. The GaN crystal property of is improved by using a template grown by metal organic chemical vapor deposition (MOCVD). A light distribution variable device with Si comb actuator is monolithically fabricated.

Original languageEnglish
Title of host publicationTRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems
Pages1349-1352
Number of pages4
DOIs
Publication statusPublished - 2009
EventTRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems - Denver, CO, United States
Duration: 2009 Jun 212009 Jun 25

Publication series

NameTRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems

Other

OtherTRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems
Country/TerritoryUnited States
CityDenver, CO
Period09/6/2109/6/25

Keywords

  • Comb actuator
  • GaN
  • GaN-Si hybrid MEMS

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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