GaN freestanding waveguides on Si substrate for Si/GaN hybrid photonic integration

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Combination of GaN devices with Si devices is promising for the future hybrid integration in optical MEMS such as embedded light sources with electronic circuits. However, GaN optical waveguides are not directly formed on Si substrate because the refractive index of GaN is lower than that of Si. In this research, a GaN layer is grown epitaxially on a Si substrate and GaN freestanding waveguides are fabricated on the Si substrate by etching the Si substrate with XeF2. The waveguides are supported by bridge structures. Light wave propagation is simulated using finite-difference time-domain (FDTD) method. The GaN waveguides are patterned by electron beam lithography using a Cl2 plasma and the etching properties are examined. The waveguide properties such as loss are measured at blue and infrared wavelengths.

Original languageEnglish
Title of host publication2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2057-2060
Number of pages4
ISBN (Print)9781479989553
DOIs
Publication statusPublished - 2015 Aug 5
Event18th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2015 - Anchorage, United States
Duration: 2015 Jun 212015 Jun 25

Other

Other18th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2015
CountryUnited States
CityAnchorage
Period15/6/2115/6/25

Keywords

  • GaN on Si substrate
  • Photonic waveguide
  • Plasma etching
  • XeF2 etching

ASJC Scopus subject areas

  • Instrumentation
  • Electrical and Electronic Engineering

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