GaN film growth on Si substrate for sub-wavelength optical MEMS

F. R. Hu, K. Ochi, B. S. Choi, Y. Kanamori, K. Hane

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Optical MEMS technology is attractive for miniaturizing several optical systems. On the other hand, GaN is a new and powerful material for photonic devices such as light emitting and laser diodes. We are studying GaN film grown on Si substrate for the optical MEMS application in order to fabricate monolithic structure. In this paper, a subwavelength optical MEMS is proposed and the characteristics of GaN film grown on Si substrate by MBE are reported The surface morphology of the grown GaN film is measured by electron microscopy and atomic force microscopy. Photoluminescence and X-ray diffraction measurements are also carried our under several growth conditions. Furthermore, a preliminary grating structure is fabricated for the MEMS application.

Original languageEnglish
Title of host publicationTRANSDUCERS '05 - 13th International Conference on Solid-State Sensors and Actuators and Microsystems - Digest of Technical Papers
Pages1043-1046
Number of pages4
DOIs
Publication statusPublished - 2005 Nov 9
Event13th International Conference on Solid-State Sensors and Actuators and Microsystems, TRANSDUCERS '05 - Seoul, Korea, Republic of
Duration: 2005 Jun 52005 Jun 9

Publication series

NameDigest of Technical Papers - International Conference on Solid State Sensors and Actuators and Microsystems, TRANSDUCERS '05
Volume1

Other

Other13th International Conference on Solid-State Sensors and Actuators and Microsystems, TRANSDUCERS '05
CountryKorea, Republic of
CitySeoul
Period05/6/505/6/9

Keywords

  • Epitaxy
  • GaN
  • MBE
  • Resonant grating

ASJC Scopus subject areas

  • Engineering(all)

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