GaN film fabrication by near-atmospheric plasma-assisted chemical vapor deposition

Takahiro Nagata, Yoshiki Sakuma, Tsuyoshi Uehara, Toyohiro Chikyow

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

A GaN thin film was fabricated by near-atmospheric plasma-assisted chemical vapor deposition. Pure nitrogen plasma can be generated stably using an alternating pulsed voltage system that applies an alternating pulsed voltage between two parallelplate electrodes. The excited nitrogen species correspond to the N2 second positive system. An ionic molecular species, which causes film damage, was not observed by optical emission spectrum analysis. Using this plasma as a nitrogen source, the metalorganic chemical vapor deposition of GaN thin film was carried out under a nitrogen partial pressure of 40kPa and a substrate temperature of 650°C. The quality of the GaN thin film was examined by two-dimensional X-ray diffraction analysis and X-ray pole figure measurement. These measurements revealed that the film was epitaxial with a 30° rotation of the unit cell with respect to (0001) sapphire in the (0001) basal plane.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume46
Issue number1-3
DOIs
Publication statusPublished - 2007 Jan 12
Externally publishedYes

Keywords

  • Atmospheric plasma
  • Chemical vapor deposition
  • Gallium nitride
  • III-V semiconducting materials

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'GaN film fabrication by near-atmospheric plasma-assisted chemical vapor deposition'. Together they form a unique fingerprint.

Cite this