Gan comb-drive actuators on Si substrate

T. Tanae, H. Samashima, K. Hane

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Micro-electro-mechanical comb-drive actuators made of GaN crystal are studied for an integrated a tunable GaN optical device. The GaN crystal was grown on a Si substrate by metal-organic chemical vapor deposition (MOCVD) with a low-temperature buffer layer. Selectively etching the Si substrate by XeF 2 gas, the GaN thin crystal layers are self-supported in air. Due to the residual stress by the crystal growth, the freestanding GaN layer of actuator suffers from the considerable deformation depending on the growth conditions. To compensate the convex deformation, the crystallization tension of thin HfO2 film deposited on the GaN layer is used. The displacement is 1.3 m at 70V. The fabricated GaN actuator can be useful for the monolithic integration for tunable GaN light sources.

Original languageEnglish
Title of host publication2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11
Pages486-489
Number of pages4
DOIs
Publication statusPublished - 2011 Sep 1
Event2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11 - Beijing, China
Duration: 2011 Jun 52011 Jun 9

Publication series

Name2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11

Other

Other2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11
CountryChina
CityBeijing
Period11/6/511/6/9

Keywords

  • Comb actuator
  • GaN
  • GaN on Si
  • Monolithic Integration
  • Residual stress

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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