GaN-based nitride semiconductor films deposited on nitrified HfO₂/Si substrate by molecular beam epitaxy

Nitrified HfO₂/Si substrate was used to grow GaN-based film with molecular beam epitaxy. Four-period InGaN/GaN layered structure and p/n junction were deposited on the nitrified HfO₂/Si. X-ray photoelectron spectroscopy (XPS) result shows that N was effectively incorporated into the HfO₂. The crystallographic relationship of the GaN/HfO₂/Si is GaN(0 0 0 2)∥HfO₂(1 1 1)∥Si(1 1 1). Temperature-dependent photoluminescence (PL), PL peak wavelength, PL peak intensity, and PL full-width at half-maximum of the p/n junction were investigated. Light-emitting diode was fabricated from the p/n junction. Red light was emitted at low voltage and yellow light was emitted when increasing the voltage.