GaN-based nitride semiconductor films deposited on nitrified HfO2/Si substrate by molecular beam epitaxy

F. R. Hu, H. Sameshima, M. Wakui, R. Ito, Kazuhiro Hane

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


Nitrified HfO2/Si substrate was used to grow GaN-based film with molecular beam epitaxy. Four-period InGaN/GaN layered structure and p/n junction were deposited on the nitrified HfO2/Si. X-ray photoelectron spectroscopy (XPS) result shows that N was effectively incorporated into the HfO2. The crystallographic relationship of the GaN/HfO2/Si is GaN(0 0 0 2)∥HfO2(1 1 1)∥Si(1 1 1). Temperature-dependent photoluminescence (PL), PL peak wavelength, PL peak intensity, and PL full-width at half-maximum of the p/n junction were investigated. Light-emitting diode was fabricated from the p/n junction. Red light was emitted at low voltage and yellow light was emitted when increasing the voltage.

Original languageEnglish
Pages (from-to)2996-2999
Number of pages4
JournalJournal of Crystal Growth
Issue number10
Publication statusPublished - 2009 May 1


  • A1. Photoluminescence
  • A3. Buffer layer
  • A3. Molecular beam epitaxy
  • B1. Nitrides
  • B2. Semiconducting III-V materials
  • B3. Light-emitting diodes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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