Abstract
We successfully grew GaN and GaMnN thin films on GaAs(100) and sapphire substrates at low temperatures using a new single GaN precursor, Et2Ga(N3)NH2CH3. The growth surface was monitored in-situ by reflection high-energy electron diffraction (RHEED). RMS roughness of the grown GaN films was about 4 nm. The structural and magnetic properties of the GaMnN films were investigated by X-ray diffraction, conductivity measurement, Hall-effect measurement, and superconducting quantum interference device measurement (SQUID). The GaMnN films revealed p-type conduction carriers. In the homogeneous GaMnN layers having no second phase peaks in XRD, the magnetization measurements showed a clear ferromagnetic hysteresis loop at 300 K with coercivity ∼ 100 Oe. This is the first observation of room temperature ferromagnetism in p-type GaMnN.
Original language | English |
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Pages (from-to) | S399-S402 |
Journal | Journal of the Korean Physical Society |
Volume | 42 |
Issue number | SPEC. |
Publication status | Published - 2003 Feb |
Externally published | Yes |
Event | Proceedings of The 11th Seoul International Symposium on the Physics of Semiconductors and Apllications - 2002 - Cheju Island, Korea, Republic of Duration: 2002 Aug 20 → 2002 Aug 23 |
Keywords
- GaMnN
- Low temperature growth
- MBE
- Precursor
ASJC Scopus subject areas
- Physics and Astronomy(all)