We successfully grew GaN and GaMnN thin films on GaAs(100) and sapphire substrates at low temperatures using a new single GaN precursor, Et2Ga(N3)NH2CH3. The growth surface was monitored in-situ by reflection high-energy electron diffraction (RHEED). RMS roughness of the grown GaN films was about 4 nm. The structural and magnetic properties of the GaMnN films were investigated by X-ray diffraction, conductivity measurement, Hall-effect measurement, and superconducting quantum interference device measurement (SQUID). The GaMnN films revealed p-type conduction carriers. In the homogeneous GaMnN layers having no second phase peaks in XRD, the magnetization measurements showed a clear ferromagnetic hysteresis loop at 300 K with coercivity ∼ 100 Oe. This is the first observation of room temperature ferromagnetism in p-type GaMnN.
|Journal||Journal of the Korean Physical Society|
|Publication status||Published - 2003 Feb|
|Event||Proceedings of The 11th Seoul International Symposium on the Physics of Semiconductors and Apllications - 2002 - Cheju Island, Korea, Republic of|
Duration: 2002 Aug 20 → 2002 Aug 23
- Low temperature growth
ASJC Scopus subject areas
- Physics and Astronomy(all)