GaMnN thin films grown on sapphire and GaAs substrates using single GaN precursor via molecular beam epitaxy

We successfully grew GaN and GaMnN thin films on GaAs(100) and sapphire substrates at low temperatures using a new single GaN precursor, Et₂Ga(N₃)NH₂CH₃. The growth surface was monitored in-situ by reflection high-energy electron diffraction (RHEED). RMS roughness of the grown GaN films was about 4 nm. The structural and magnetic properties of the GaMnN films were investigated by X-ray diffraction, conductivity measurement, Hall-effect measurement, and superconducting quantum interference device measurement (SQUID). The GaMnN films revealed p-type conduction carriers. In the homogeneous GaMnN layers having no second phase peaks in XRD, the magnetization measurements showed a clear ferromagnetic hysteresis loop at 300 K with coercivity ∼ 100 Oe. This is the first observation of room temperature ferromagnetism in p-type GaMnN.