GaMnN thin films grown on sapphire and GaAs substrates using single GaN precursor via molecular beam epitaxy

K. H. Kim; K. J. Lee; J. B. Park; D. J. Kim; H. Kim; Y. E. Ihm; C. S. Kim; H. C. Lee; C. G. Kim; S. H. Yoo; D. Djayaprawira; M. Takahashi

GaMnN thin films grown on sapphire and GaAs substrates using single GaN precursor via molecular beam epitaxy

K. H. Kim, K. J. Lee, J. B. Park, D. J. Kim, H. Kim, Y. E. Ihm, C. S. Kim, H. C. Lee, C. G. Kim, S. H. Yoo, D. Djayaprawira, M. Takahashi

Research output: Contribution to journal › Conference article › peer-review

7 Citations (Scopus)

Abstract

We successfully grew GaN and GaMnN thin films on GaAs(100) and sapphire substrates at low temperatures using a new single GaN precursor, Et₂Ga(N₃)NH₂CH₃. The growth surface was monitored in-situ by reflection high-energy electron diffraction (RHEED). RMS roughness of the grown GaN films was about 4 nm. The structural and magnetic properties of the GaMnN films were investigated by X-ray diffraction, conductivity measurement, Hall-effect measurement, and superconducting quantum interference device measurement (SQUID). The GaMnN films revealed p-type conduction carriers. In the homogeneous GaMnN layers having no second phase peaks in XRD, the magnetization measurements showed a clear ferromagnetic hysteresis loop at 300 K with coercivity ∼ 100 Oe. This is the first observation of room temperature ferromagnetism in p-type GaMnN.

Original language	English
Pages (from-to)	S399-S402
Journal	Journal of the Korean Physical Society
Volume	42
Issue number	SPEC.
Publication status	Published - 2003 Feb
Event	Proceedings of The 11th Seoul International Symposium on the Physics of Semiconductors and Apllications - 2002 - Cheju Island, Korea, Republic of Duration: 2002 Aug 20 → 2002 Aug 23

Keywords

GaMnN
Low temperature growth
MBE
Precursor

ASJC Scopus subject areas

Physics and Astronomy(all)

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GaMnN thin films grown on sapphire and GaAs substrates using single GaN precursor via molecular beam epitaxy. / Kim, K. H.; Lee, K. J.; Park, J. B.; Kim, D. J.; Kim, H.; Ihm, Y. E.; Kim, C. S.; Lee, H. C.; Kim, C. G.; Yoo, S. H.; Djayaprawira, D.; Takahashi, M.

In: Journal of the Korean Physical Society, Vol. 42, No. SPEC., 02.2003, p. S399-S402.

Research output: Contribution to journal › Conference article › peer-review

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title = "GaMnN thin films grown on sapphire and GaAs substrates using single GaN precursor via molecular beam epitaxy",

abstract = "We successfully grew GaN and GaMnN thin films on GaAs(100) and sapphire substrates at low temperatures using a new single GaN precursor, Et2Ga(N3)NH2CH3. The growth surface was monitored in-situ by reflection high-energy electron diffraction (RHEED). RMS roughness of the grown GaN films was about 4 nm. The structural and magnetic properties of the GaMnN films were investigated by X-ray diffraction, conductivity measurement, Hall-effect measurement, and superconducting quantum interference device measurement (SQUID). The GaMnN films revealed p-type conduction carriers. In the homogeneous GaMnN layers having no second phase peaks in XRD, the magnetization measurements showed a clear ferromagnetic hysteresis loop at 300 K with coercivity ∼ 100 Oe. This is the first observation of room temperature ferromagnetism in p-type GaMnN.",

keywords = "GaMnN, Low temperature growth, MBE, Precursor",

author = "Kim, {K. H.} and Lee, {K. J.} and Park, {J. B.} and Kim, {D. J.} and H. Kim and Ihm, {Y. E.} and Kim, {C. S.} and Lee, {H. C.} and Kim, {C. G.} and Yoo, {S. H.} and D. Djayaprawira and M. Takahashi",

note = "Copyright: Copyright 2004 Elsevier Science B.V., Amsterdam. All rights reserved.; Proceedings of The 11th Seoul International Symposium on the Physics of Semiconductors and Apllications - 2002 ; Conference date: 20-08-2002 Through 23-08-2002",

year = "2003",

month = feb,

language = "English",

volume = "42",

pages = "S399--S402",

journal = "Journal of the Korean Physical Society",

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TY - JOUR

T1 - GaMnN thin films grown on sapphire and GaAs substrates using single GaN precursor via molecular beam epitaxy

AU - Kim, K. H.

AU - Lee, K. J.

AU - Park, J. B.

AU - Kim, D. J.

AU - Kim, H.

AU - Ihm, Y. E.

AU - Kim, C. S.

AU - Lee, H. C.

AU - Kim, C. G.

AU - Yoo, S. H.

AU - Djayaprawira, D.

AU - Takahashi, M.

PY - 2003/2

Y1 - 2003/2

N2 - We successfully grew GaN and GaMnN thin films on GaAs(100) and sapphire substrates at low temperatures using a new single GaN precursor, Et2Ga(N3)NH2CH3. The growth surface was monitored in-situ by reflection high-energy electron diffraction (RHEED). RMS roughness of the grown GaN films was about 4 nm. The structural and magnetic properties of the GaMnN films were investigated by X-ray diffraction, conductivity measurement, Hall-effect measurement, and superconducting quantum interference device measurement (SQUID). The GaMnN films revealed p-type conduction carriers. In the homogeneous GaMnN layers having no second phase peaks in XRD, the magnetization measurements showed a clear ferromagnetic hysteresis loop at 300 K with coercivity ∼ 100 Oe. This is the first observation of room temperature ferromagnetism in p-type GaMnN.

AB - We successfully grew GaN and GaMnN thin films on GaAs(100) and sapphire substrates at low temperatures using a new single GaN precursor, Et2Ga(N3)NH2CH3. The growth surface was monitored in-situ by reflection high-energy electron diffraction (RHEED). RMS roughness of the grown GaN films was about 4 nm. The structural and magnetic properties of the GaMnN films were investigated by X-ray diffraction, conductivity measurement, Hall-effect measurement, and superconducting quantum interference device measurement (SQUID). The GaMnN films revealed p-type conduction carriers. In the homogeneous GaMnN layers having no second phase peaks in XRD, the magnetization measurements showed a clear ferromagnetic hysteresis loop at 300 K with coercivity ∼ 100 Oe. This is the first observation of room temperature ferromagnetism in p-type GaMnN.

KW - GaMnN

KW - Low temperature growth

KW - MBE

KW - Precursor

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M3 - Conference article

AN - SCOPUS:0037307102

VL - 42

SP - S399-S402

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

SN - 0374-4884

IS - SPEC.

T2 - Proceedings of The 11th Seoul International Symposium on the Physics of Semiconductors and Apllications - 2002

Y2 - 20 August 2002 through 23 August 2002

ER -