GaMnN thin films grown on sapphire and GaAs substrates using single GaN precursor via molecular beam epitaxy

K. H. Kim, K. J. Lee, J. B. Park, D. J. Kim, H. Kim, Y. E. Ihm, C. S. Kim, H. C. Lee, C. G. Kim, S. H. Yoo, D. Djayaprawira, M. Takahashi

    Research output: Contribution to journalConference articlepeer-review

    7 Citations (Scopus)

    Abstract

    We successfully grew GaN and GaMnN thin films on GaAs(100) and sapphire substrates at low temperatures using a new single GaN precursor, Et2Ga(N3)NH2CH3. The growth surface was monitored in-situ by reflection high-energy electron diffraction (RHEED). RMS roughness of the grown GaN films was about 4 nm. The structural and magnetic properties of the GaMnN films were investigated by X-ray diffraction, conductivity measurement, Hall-effect measurement, and superconducting quantum interference device measurement (SQUID). The GaMnN films revealed p-type conduction carriers. In the homogeneous GaMnN layers having no second phase peaks in XRD, the magnetization measurements showed a clear ferromagnetic hysteresis loop at 300 K with coercivity ∼ 100 Oe. This is the first observation of room temperature ferromagnetism in p-type GaMnN.

    Original languageEnglish
    Pages (from-to)S399-S402
    JournalJournal of the Korean Physical Society
    Volume42
    Issue numberSPEC.
    Publication statusPublished - 2003 Feb
    EventProceedings of The 11th Seoul International Symposium on the Physics of Semiconductors and Apllications - 2002 - Cheju Island, Korea, Republic of
    Duration: 2002 Aug 202002 Aug 23

    Keywords

    • GaMnN
    • Low temperature growth
    • MBE
    • Precursor

    ASJC Scopus subject areas

    • Physics and Astronomy(all)

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