(Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs

Hideo Ohno, A. Shen, Fumihiro Matsukura, A. Oiwa, A. Endo, S. Katsumoto, Y. Iye

Research output: Contribution to journalArticle

2111 Citations (Scopus)

Abstract

A new GaAs-based diluted magnetic semiconductor, (Ga,Mn)As, was prepared by molecular beam epitaxy. The lattice constant of (Ga,Mn)As films was determined by x-ray diffraction and shown to increase with the increase of Mn composition, x. Well-aligned in-plane ferromagnetic order was observed by magnetization measurements. Magnetotransport measurements revealed the occurrence of anomalous Hall effect in the (Ga,Mn)As layer.

Original languageEnglish
Pages (from-to)363-365
Number of pages3
JournalApplied Physics Letters
Volume69
Issue number3
DOIs
Publication statusPublished - 1996 Jul 15

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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