Gamma and X-ray sensitivity of Gd2O3 heterojunctions

Juan A. Colón Santana, C. M. Young, J. W. McClory, J. C. Petrosky, X. Wang, P. Liu, Jinke Tang, V. T. Adamiv, Ya V. Burak, Keisuke Fukutani, P. A. Dowben

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


We find that Gd2O3 thin films strongly favor a (-402) texture growth on a variety of substrates and will form heterojunction diodes with silicon, especially when doped with oxygen vacancies. Even in the thin film limit, these heterojunction diodes appear to be sensitive to gamma radiation, likely from the X-rays created by scattering events, adding to the numerous hurdles that must be overcome if Gd based semiconductor devices are to be used for solid state neutron detection applications.

Original languageEnglish
Pages (from-to)99-102
Number of pages4
JournalRadiation Measurements
Publication statusPublished - 2013 Apr


  • Gd doping
  • Neutron detection
  • Oxide dielectric layers

ASJC Scopus subject areas

  • Radiation
  • Instrumentation


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