Gallium concentration dependence of room-temperature near-band-edge luminescence in n-type ZnO:Ga

T. Makino, Y. Segawa, S. Yoshida, A. Tsukazaki, A. Ohtomo, M. Kawasaki

Research output: Contribution to journalArticlepeer-review

164 Citations (Scopus)

Abstract

The room temperature (RT) near-band-edge (NBE) luminescence in n-type ZnO:Ga epitaxial layers was investigated. The gallium doping concentration dependence of the radiative efficiency, threshold energy and the linewidth of the near-band-gap optical transition were studied. The RT NBE luminescence in ZnO:Ga was observed for Ga doping concentrations ranging from 8 × 10 18 to 6 × 1020 cm-3. For relatively low dopant concentrations, the NBE luminesacence was assigned to donor-to-free-hole recombination, while for higher concentrations it was assigned to donor-acceptor pair.

Original languageEnglish
Pages (from-to)759-761
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number5
DOIs
Publication statusPublished - 2004 Aug 2

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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