GaInAsP/InP DH laser on semi-insulating InP substrate with terrace structure

T. Matsuoka, Y. Suzuki, Y. Noguchi, H. Nagai

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

GalnAsP/lnP DH lasers for the 1.3 μm region were fabricated through a single LPE process on semi-insulating InP substrates with a terrace structure. The threshold current of the mounted lasers was typically 65 mA under CW operation at room temperature. Light output of 450 mW per facet was achieved at a pulsed injection current of 4.2 A.

Original languageEnglish
Pages (from-to)359-361
Number of pages3
JournalElectronics Letters
Volume18
Issue number9
DOIs
Publication statusPublished - 1982 Apr 29
Externally publishedYes

Keywords

  • Lasers and applications
  • Semiconductor lasers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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