Gain-length scaling in quantum dot/quantum well infrared photodetectors

T. Yamanaka, B. Movaghar, S. Tsao, S. Kuboya, A. Myzaferi, M. Razeghi

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

The gain in quantum dot/quantum well infrared photodetectors is investigated. The scaling of the gain with device length has been analyzed, and the behavior agrees with the previously proposed model. We conclude that we understand the gain in the low bias region, but in the high field region, discrepancies remain. An extension of the gain model is presented to cover the very high electric field region. The high field data are compared to the extended model and discussed.

Original languageEnglish
Article number093502
JournalApplied Physics Letters
Volume95
Issue number9
DOIs
Publication statusPublished - 2009

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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