GaAs/n-AlGaAs field-effect transistor with embedded InAs quantum traps and its programmable threshold characteristics

G. Yusa, H. Sakaki

Research output: Contribution to journalArticle

61 Citations (Scopus)

Abstract

Novel GaAs/n-AlGaAs FETs have been developed by placing InAs quantum dots near the channel. The authors show that the electron concentration increases linearly with gate voltage but its threshold voltage can be programmable by trapping electrons in these dots. Analysis has shown that one electron is trapped by each InAs dot.

Original languageEnglish
Pages (from-to)491-493
Number of pages3
JournalElectronics Letters
Volume32
Issue number5
DOIs
Publication statusPublished - 1996 Feb 29
Externally publishedYes

Keywords

  • Aluminium gallium arsenide
  • Field effect transistors
  • Gallium arsenide

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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