Novel GaAs/n-AlGaAs FETs have been developed by placing InAs quantum dots near the channel. The authors show that the electron concentration increases linearly with gate voltage but its threshold voltage can be programmable by trapping electrons in these dots. Analysis has shown that one electron is trapped by each InAs dot.
- Aluminium gallium arsenide
- Field effect transistors
- Gallium arsenide
ASJC Scopus subject areas
- Electrical and Electronic Engineering