Gaas(100) (2 x 4) surface study by molecular beam epitaxy and field-ion-scanning-tunneling-microscopy

Hongwei Xu, Tomihiro Hashizume, Toshio Sakurai

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20 Citations (Scopus)

Abstract

The GaAs(lOO) (2 x 4) surface was studied by molecular beam epitaxy (MBE) and field-ion-scanning-tunneling-microscopy (FI-STM). The results showed that the GaAs(lOO) (2 x 4) surface unit cell consists of two dimers and two missing dimers of As. The c(2 x 8) reconstruction was observed to originate by the phase shift induced by the As vacancies. We also observed the domain boundaries on the GaAs(lOO) (2 x 4) surface and they were attributed to two dimensional island growth. A structural model was proposed to explain the observed surface reconstructions.

Original languageEnglish
Pages (from-to)1511-1514
Number of pages4
JournalJapanese journal of applied physics
Volume32
Issue number3 S
DOIs
Publication statusPublished - 1993 Mar
Externally publishedYes

Keywords

  • Dimmers
  • FI-STM
  • GaAs(100)
  • MBE

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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