Gaas(100) (2 x 4) surface study by molecular beam epitaxy and field-ion-scanning-tunneling-microscopy

Hongwei Xu, Tomihiro Hashizume, Toshio Sakurai

    Research output: Contribution to journalArticle

    20 Citations (Scopus)

    Abstract

    The GaAs(lOO) (2 x 4) surface was studied by molecular beam epitaxy (MBE) and field-ion-scanning-tunneling-microscopy (FI-STM). The results showed that the GaAs(lOO) (2 x 4) surface unit cell consists of two dimers and two missing dimers of As. The c(2 x 8) reconstruction was observed to originate by the phase shift induced by the As vacancies. We also observed the domain boundaries on the GaAs(lOO) (2 x 4) surface and they were attributed to two dimensional island growth. A structural model was proposed to explain the observed surface reconstructions.

    Original languageEnglish
    Pages (from-to)1511-1514
    Number of pages4
    JournalJapanese journal of applied physics
    Volume32
    Issue number3 S
    DOIs
    Publication statusPublished - 1993 Mar

    Keywords

    • Dimmers
    • FI-STM
    • GaAs(100)
    • MBE

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

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