(GaAs)//1 /(InAs)//1 SUPERLATTICE SEMICONDUCTOR.

H. Ohno, R. Katsumi, H. Hasegawa

Research output: Contribution to conferencePaperpeer-review

Abstract

Molecular beam epitaxial growth of (GaAs)//n /(InAs)//n superlattice semiconductors on InP substrates as well as on GaAs substrates is reported. The reflection electron diffraction (RED) pattern was used to monitor the growth process, and was streaky during the growth of (GaAs)//n /(InAs)//n (n equals 1,2) indicating two-dimensional growth. RED intensity oscillations were observed during growth of the superlattice. The successful growth of (GaAs)//n /(InAs)//n on InP substrates was confirmed by X-ray diffraction.

Original languageEnglish
Pages295-301
Number of pages7
Publication statusPublished - 1985
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)

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