Molecular beam epitaxial growth of (GaAs)//n /(InAs)//n superlattice semiconductors on InP substrates as well as on GaAs substrates is reported. The reflection electron diffraction (RED) pattern was used to monitor the growth process, and was streaky during the growth of (GaAs)//n /(InAs)//n (n equals 1,2) indicating two-dimensional growth. RED intensity oscillations were observed during growth of the superlattice. The successful growth of (GaAs)//n /(InAs)//n on InP substrates was confirmed by X-ray diffraction.
|Number of pages||7|
|Publication status||Published - 1985|
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