GaAs is an unique and advanced photocathode which can generate highly polarized and extremely low emittance electron beam. The photo-emission is possible up to 900nm wavelength. These advantages are due to NEA (Negative Electron Affinity) surface where the conduction band minimum is higher than the vacuum energy state. The NEA surface is artificially made with Cs-O/F evaporation on the cleaned GaAs surface, but the NEA surface is fragile, so that the emission is easily lost by poor vacuum environment and high emission density. NEA activation with any vital material is desirable. We found that the GaAs can be activated by CsTe thin film which is known as a vital photo-cathode material. The photo-electron emission spectrum extends up to 900 nm wavelength which corresponds to the band-gap energy of GaAs. The result strongly suggests that the surface becomes effectively NEA state by the CsTe thin film.