GaAs microcrystal growth and its position control by low energy focused ion beam

T. Chikyow; N. Koguchi

doi:10.1109/IMNC.2002.1178622

GaAs microcrystal growth and its position control by low energy focused ion beam

T. Chikyow, N. Koguchi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

GaAs microcrystal growth and its position control was demonstrated using a low energy focused ion beam system to fabricate the photonic crystals. Due to the rapid progress in ULSI design and the trend in high density packing, in the near future, the Al or Cu based interconnection system will face a difficulty in the signal flow. For this purpose, the photonic crystal and its application to the optical signal transfer system has been intensively studied. In this system, a crucial point is how to fabricate the ordered and controlled structure which has higher dielectric constant. For this system, imbedded GaAs microcrystals in SiO₂ are thought to be the best candidate. But the challenging is the position controlling of the GaAs microcrystals. For this purpose, we demonstrate the array of GaAs microcrystals on Si(100) surface with As-termination method.

Original language	English
Title of host publication	2002 International Microprocesses and Nanotechnology Conference, MNC 2002
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	218-219
Number of pages	2
ISBN (Electronic)	4891140313, 9784891140311
DOIs	https://doi.org/10.1109/IMNC.2002.1178622
Publication status	Published - 2002 Jan 1
Externally published	Yes
Event	International Microprocesses and Nanotechnology Conference, MNC 2002 - Tokyo, Japan Duration: 2002 Nov 6 → 2002 Nov 8

Publication series

Name	2002 International Microprocesses and Nanotechnology Conference, MNC 2002

Other

Other	International Microprocesses and Nanotechnology Conference, MNC 2002
Country	Japan
City	Tokyo
Period	02/11/6 → 02/11/8

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/IMNC.2002.1178622

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Chikyow, T., & Koguchi, N. (2002). GaAs microcrystal growth and its position control by low energy focused ion beam. In 2002 International Microprocesses and Nanotechnology Conference, MNC 2002 (pp. 218-219). [1178622] (2002 International Microprocesses and Nanotechnology Conference, MNC 2002). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMNC.2002.1178622

GaAs microcrystal growth and its position control by low energy focused ion beam. / Chikyow, T.; Koguchi, N.

2002 International Microprocesses and Nanotechnology Conference, MNC 2002. Institute of Electrical and Electronics Engineers Inc., 2002. p. 218-219 1178622 (2002 International Microprocesses and Nanotechnology Conference, MNC 2002).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Chikyow, T & Koguchi, N 2002, GaAs microcrystal growth and its position control by low energy focused ion beam. in 2002 International Microprocesses and Nanotechnology Conference, MNC 2002., 1178622, 2002 International Microprocesses and Nanotechnology Conference, MNC 2002, Institute of Electrical and Electronics Engineers Inc., pp. 218-219, International Microprocesses and Nanotechnology Conference, MNC 2002, Tokyo, Japan, 02/11/6. https://doi.org/10.1109/IMNC.2002.1178622

Chikyow T, Koguchi N. GaAs microcrystal growth and its position control by low energy focused ion beam. In 2002 International Microprocesses and Nanotechnology Conference, MNC 2002. Institute of Electrical and Electronics Engineers Inc. 2002. p. 218-219. 1178622. (2002 International Microprocesses and Nanotechnology Conference, MNC 2002). https://doi.org/10.1109/IMNC.2002.1178622

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