GaAs microcrystal growth and its position control by low energy focused ion beam

T. Chikyow, N. Koguchi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

GaAs microcrystal growth and its position control was demonstrated using a low energy focused ion beam system to fabricate the photonic crystals. Due to the rapid progress in ULSI design and the trend in high density packing, in the near future, the Al or Cu based interconnection system will face a difficulty in the signal flow. For this purpose, the photonic crystal and its application to the optical signal transfer system has been intensively studied. In this system, a crucial point is how to fabricate the ordered and controlled structure which has higher dielectric constant. For this system, imbedded GaAs microcrystals in SiO2 are thought to be the best candidate. But the challenging is the position controlling of the GaAs microcrystals. For this purpose, we demonstrate the array of GaAs microcrystals on Si(100) surface with As-termination method.

Original languageEnglish
Title of host publication2002 International Microprocesses and Nanotechnology Conference, MNC 2002
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages218-219
Number of pages2
ISBN (Electronic)4891140313, 9784891140311
DOIs
Publication statusPublished - 2002 Jan 1
Externally publishedYes
EventInternational Microprocesses and Nanotechnology Conference, MNC 2002 - Tokyo, Japan
Duration: 2002 Nov 62002 Nov 8

Publication series

Name2002 International Microprocesses and Nanotechnology Conference, MNC 2002

Other

OtherInternational Microprocesses and Nanotechnology Conference, MNC 2002
Country/TerritoryJapan
CityTokyo
Period02/11/602/11/8

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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