TY - GEN
T1 - GaAs microcrystal growth and its position control by low energy focused ion beam
AU - Chikyow, T.
AU - Koguchi, N.
PY - 2002/1/1
Y1 - 2002/1/1
N2 - GaAs microcrystal growth and its position control was demonstrated using a low energy focused ion beam system to fabricate the photonic crystals. Due to the rapid progress in ULSI design and the trend in high density packing, in the near future, the Al or Cu based interconnection system will face a difficulty in the signal flow. For this purpose, the photonic crystal and its application to the optical signal transfer system has been intensively studied. In this system, a crucial point is how to fabricate the ordered and controlled structure which has higher dielectric constant. For this system, imbedded GaAs microcrystals in SiO2 are thought to be the best candidate. But the challenging is the position controlling of the GaAs microcrystals. For this purpose, we demonstrate the array of GaAs microcrystals on Si(100) surface with As-termination method.
AB - GaAs microcrystal growth and its position control was demonstrated using a low energy focused ion beam system to fabricate the photonic crystals. Due to the rapid progress in ULSI design and the trend in high density packing, in the near future, the Al or Cu based interconnection system will face a difficulty in the signal flow. For this purpose, the photonic crystal and its application to the optical signal transfer system has been intensively studied. In this system, a crucial point is how to fabricate the ordered and controlled structure which has higher dielectric constant. For this system, imbedded GaAs microcrystals in SiO2 are thought to be the best candidate. But the challenging is the position controlling of the GaAs microcrystals. For this purpose, we demonstrate the array of GaAs microcrystals on Si(100) surface with As-termination method.
UR - http://www.scopus.com/inward/record.url?scp=84960428959&partnerID=8YFLogxK
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U2 - 10.1109/IMNC.2002.1178622
DO - 10.1109/IMNC.2002.1178622
M3 - Conference contribution
AN - SCOPUS:84960428959
T3 - 2002 International Microprocesses and Nanotechnology Conference, MNC 2002
SP - 218
EP - 219
BT - 2002 International Microprocesses and Nanotechnology Conference, MNC 2002
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - International Microprocesses and Nanotechnology Conference, MNC 2002
Y2 - 6 November 2002 through 8 November 2002
ER -