GaAs micro crystal growth on a As-terminated Si (001) surface by low energy focused ion beam

Toyohiro Chikyo, Nobuyuki Koguchi

Research output: Contribution to journalConference article

Abstract

Ordered GaAs micro crystal growth on a As-terminated Si (001) surface was demonstrated using a low energy focused ion beam. Si (001) surface was terminated by Arsenic. The surface showed a (2×1) structure with As dimers. The As layer was sputtered periodically with low energy focused Ga ion beam. Supplied Ga atoms migrated on the surface and trapped at the As removed region, forming Ga droplets. GaAs micro crystals were grown from Ga droplets by As molecule supply. The proposed method was shown to be effective as a fabrication method.

Original languageEnglish
Pages (from-to)445-450
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume536
Publication statusPublished - 1999 Jan 1
Externally publishedYes
EventProceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998' - Boston, MA, USA
Duration: 1998 Nov 301998 Dec 3

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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