GaAs and In0.53Ga0.47as MIS structures having an ultrathin pseudomorphic interface control layer of si prepared by MBE

Hideki Hasegawa, Masamichi Akazawa, Ken Ichirou Matsuzaki, Hirotatsu Ishii, Hideo Ohno

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77 Citations (Scopus)

Abstract

A novel compound semiconductor MIS structure using an ultra-thin partially oxidized MBE Sifilm as a pseudomorphic interface control layer (ICL) is reported for GaAs and InGaAs. As an outer insulator layer, a silicon dioxide or silicon nitride film is deposited in-situ by a low-temperature photo-CVD process using an ArF excimer laser. While the GaAs MIS structure exhibited strong Fermilevel pinning, the InGaAs MIS structure showed completely “unpinned” behavior with avery small hysteresis after annealing. The difference is qualitatively explained by a band line-up of the constituent materials.

Original languageEnglish
Pages (from-to)L2265-L2267
JournalJapanese journal of applied physics
Volume27
Issue number12A
DOIs
Publication statusPublished - 1988 Dec
Externally publishedYes

Keywords

  • C-V curves
  • Compound semiconductor
  • Fermi level pinning
  • Gaas
  • Ingaas
  • Inter-face state
  • MBE
  • MIS structure
  • Pseudomorphic
  • Unpinning

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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