GaAs- and InP-Based High-Electron-Mobility Transistors

Research output: Chapter in Book/Report/Conference proceedingChapter

1 Citation (Scopus)

Abstract

The fundamental aspects and applications of high-electron-mobility transistors (HEMTs) are described. This chapter begins with the history of HEMT development - from GaAs to InP material systems. A major part of this chapter focuses on the InP HEMTs, and narrow-band-gap antimonide-based HEMTs are introduced in the final part as one of the emerging technologies. The first half of the chapter is a tutorial that explains the operation principle, important figure-of-merits, and key fabrication techniques of HEMTs. Subsequently, a section is dedicated to focus on some parasitic phenomena related to the device reliability issues and underlying physics behind them that have been often discussed in journals and conferences. Finally, the chapter concludes with the future challenge and prospects of HEMTs.

Original languageEnglish
Title of host publicationComprehensive Semiconductor Science and Technology
PublisherElsevier Inc.
Pages84-113
Number of pages30
Volume1-6
ISBN (Print)9780444531537
DOIs
Publication statusPublished - 2011 Jan 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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