Ga0.47Ln0.53As Metal-Semiconductor-Metal Photodiodes Using a Lattice Mismatched Al0.4Ga0.6As Schottky Assist Layer

T. Kikuchi, H. Ohno, H. Hasegawa, T. kikuchi, H. ohno, H. hasegawa

Research output: Contribution to journalArticlepeer-review

24 Citations (Scopus)

Abstract

Metal-semiconductor-metal photodiodes (MSM PDs) with Ga0.47In0.53As active layers were fabricated. The low Schottky barrier height of GaInAs was overcome by the insertion of a lattice mismatched AlGaAs intermediary layer between metal and GalnAs active layer. Fabricated MSM PDs utilising interdigitated metal electrodes formed by a self-alignment technique showed a fast rise and fall time of 650 ps, which was limited by the capacitance of the device. The gain of the device was less than 1. 0.

Original languageEnglish
Pages (from-to)1208-1210
Number of pages3
JournalElectronics Letters
Volume24
Issue number19
DOIs
Publication statusPublished - 1988
Externally publishedYes

Keywords

  • Semiconductor devices and materials
  • Semiconductor growth
  • photodiodes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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