Metal-semiconductor-metal photodiodes (MSM PDs) with Ga0.47In0.53As active layers were fabricated. The low Schottky barrier height of GaInAs was overcome by the insertion of a lattice mismatched AlGaAs intermediary layer between metal and GalnAs active layer. Fabricated MSM PDs utilising interdigitated metal electrodes formed by a self-alignment technique showed a fast rise and fall time of 650 ps, which was limited by the capacitance of the device. The gain of the device was less than 1. 0.
- Semiconductor devices and materials
- Semiconductor growth
ASJC Scopus subject areas
- Electrical and Electronic Engineering