Ga segregation in Czochralski-Si crystal growth with B codoping

Xinming Huang, M. Arivanandhan, Raira Gotoh, Takeshi Hoshikawa, Satoshi Uda

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)

Abstract

Codoping of gallium (Ga) and boron (B) in a Czochralski-silicon (CZ-Si) crystal has been proposed to be an effective way to improve the homogeneity of resistivity over the length of a simply Ga-doped Si crystal, by increasing the very small equilibrium segregation coefficient of Ga (k0=0.008). It was observed that the axial resistivity variation in a Ga- and B-codoped Si crystal was smaller than that in simply Ga-doped Si crystals. The segregation behavior of Ga and B in the codoped CZ-Si crystal growth has been investigated in the present study. The effective segregation coefficient of Ga was kept almost constant when the B concentrations were low, but it increased at higher B concentrations. On the other hand, the effective segregation coefficient of B was kept almost constant when the B concentrations were low; however, it decreased at higher B concentrations. It has been analytically demonstrated that there is strong interaction between Ga and B in a Si crystal, which leads to an increase in the segregation coefficient of Ga in Si crystal growth.

Original languageEnglish
Pages (from-to)3335-3341
Number of pages7
JournalJournal of Crystal Growth
Volume310
Issue number14
DOIs
Publication statusPublished - 2008 Jul 1

Keywords

  • A1. Ga and B codoping
  • A1. Segregation
  • A2. Czochralski-Si crystal growth
  • B3. Solar cells

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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