Abstract
Codoping of gallium (Ga) and boron (B) in a Czochralski-silicon (CZ-Si) crystal has been proposed to be an effective way to improve the homogeneity of resistivity over the length of a simply Ga-doped Si crystal, by increasing the very small equilibrium segregation coefficient of Ga (k0=0.008). It was observed that the axial resistivity variation in a Ga- and B-codoped Si crystal was smaller than that in simply Ga-doped Si crystals. The segregation behavior of Ga and B in the codoped CZ-Si crystal growth has been investigated in the present study. The effective segregation coefficient of Ga was kept almost constant when the B concentrations were low, but it increased at higher B concentrations. On the other hand, the effective segregation coefficient of B was kept almost constant when the B concentrations were low; however, it decreased at higher B concentrations. It has been analytically demonstrated that there is strong interaction between Ga and B in a Si crystal, which leads to an increase in the segregation coefficient of Ga in Si crystal growth.
Original language | English |
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Pages (from-to) | 3335-3341 |
Number of pages | 7 |
Journal | Journal of Crystal Growth |
Volume | 310 |
Issue number | 14 |
DOIs | |
Publication status | Published - 2008 Jul 1 |
Keywords
- A1. Ga and B codoping
- A1. Segregation
- A2. Czochralski-Si crystal growth
- B3. Solar cells
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry