TY - JOUR
T1 - Ga segregation during Czochralski-Si crystal growth with Ge codoping
AU - Gotoh, Raira
AU - Arivanandhan, M.
AU - Fujiwara, Kozo
AU - Uda, Satoshi
N1 - Funding Information:
This work was supported in part by the Global COE Program “Materials Integration, Tohoku University,” MEXT, Japan.
PY - 2010/10/1
Y1 - 2010/10/1
N2 - The segregation of Ga during the growth of Czochralski-Si crystals with Ge codoping was investigated. The effective segregation coefficient of Ga in Ga/Ge-codoped Si crystal growth was nearly constant over a wide Ge concentration range, even at high Ge concentrations of about 1021 cm-3. In contrast, the effective segregation coefficient increased at high B concentrations in Ga/B-codoped CZ-Si crystal growth. The segregation behavior of Ga in Ga/Ge- and Ga/B-codoped CZ-Si crystal growth was theoretically compared. The difference in the segregation coefficients of Ga as a function of the codoped impurity (Ge or B) between the two Si crystals was attributed to a difference in the excess enthalpy due to impurity incorporation into the Si crystal between GaGe pairs and GaB pairs The effect of Ge codoping on the minority carrier lifetime in Ga/Ge-codoped CZ-Si crystals was also investigated. The minority carrier lifetime increased with increasing Ge concentration. The higher minority carrier lifetime was associated with a decrease in interstitial oxygen related to D-defects in the Si crystal.
AB - The segregation of Ga during the growth of Czochralski-Si crystals with Ge codoping was investigated. The effective segregation coefficient of Ga in Ga/Ge-codoped Si crystal growth was nearly constant over a wide Ge concentration range, even at high Ge concentrations of about 1021 cm-3. In contrast, the effective segregation coefficient increased at high B concentrations in Ga/B-codoped CZ-Si crystal growth. The segregation behavior of Ga in Ga/Ge- and Ga/B-codoped CZ-Si crystal growth was theoretically compared. The difference in the segregation coefficients of Ga as a function of the codoped impurity (Ge or B) between the two Si crystals was attributed to a difference in the excess enthalpy due to impurity incorporation into the Si crystal between GaGe pairs and GaB pairs The effect of Ge codoping on the minority carrier lifetime in Ga/Ge-codoped CZ-Si crystals was also investigated. The minority carrier lifetime increased with increasing Ge concentration. The higher minority carrier lifetime was associated with a decrease in interstitial oxygen related to D-defects in the Si crystal.
KW - A1. Ga and Ge codoping
KW - A1. Point defect
KW - A2. Czochralski method
KW - A2. Single crystal growth
KW - B2. Semiconductor silicon
KW - B3. Solar cells
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U2 - 10.1016/j.jcrysgro.2010.07.007
DO - 10.1016/j.jcrysgro.2010.07.007
M3 - Article
AN - SCOPUS:77956417247
VL - 312
SP - 2865
EP - 2870
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 20
ER -