Ga focused-ion-beam shallow-implanted quantum wires

M. Itoh; T. Saku; Y. Hirayama; S. Tarucha

doi:10.1116/1.589350

Ga focused-ion-beam shallow-implanted quantum wires

M. Itoh, T. Saku, Y. Hirayama, S. Tarucha

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Quantum wires were fabricated by shallow implantation of Ga ions from a focused-ion-beam source into a modulation-doped Al_xGa_1-xAs/GaAs heterostructure. This type of implantation reduces crystal damage and keeps the implanted ions away from the two-dimensional electron gas. An electron mobility as high as 5.04×10⁵ cm²/V s was obtained for 10-μm-long wires with an effective width of 0.152 μm, which is much higher than any previously reported values. The electron ballistic lengths in the wires were determined from measurements of the bend and transfer resistance and agreed well with the calculated elastic mean free paths. The transfer resistance versus magnetic field profiles exhibited electron focusing peaks associated with good specularity at the boundary.

Original language	English
Pages (from-to)	1657-1660
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	15
Issue number	5
DOIs	https://doi.org/10.1116/1.589350
Publication status	Published - 1997
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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@article{e9cfb46389014727a14c64de6911e322,

title = "Ga focused-ion-beam shallow-implanted quantum wires",

abstract = "Quantum wires were fabricated by shallow implantation of Ga ions from a focused-ion-beam source into a modulation-doped AlxGa1-xAs/GaAs heterostructure. This type of implantation reduces crystal damage and keeps the implanted ions away from the two-dimensional electron gas. An electron mobility as high as 5.04×105 cm2/V s was obtained for 10-μm-long wires with an effective width of 0.152 μm, which is much higher than any previously reported values. The electron ballistic lengths in the wires were determined from measurements of the bend and transfer resistance and agreed well with the calculated elastic mean free paths. The transfer resistance versus magnetic field profiles exhibited electron focusing peaks associated with good specularity at the boundary.",

author = "M. Itoh and T. Saku and Y. Hirayama and S. Tarucha",

year = "1997",

doi = "10.1116/1.589350",

language = "English",

volume = "15",

pages = "1657--1660",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

number = "5",

}

TY - JOUR

T1 - Ga focused-ion-beam shallow-implanted quantum wires

AU - Itoh, M.

AU - Saku, T.

AU - Hirayama, Y.

AU - Tarucha, S.

PY - 1997

Y1 - 1997

N2 - Quantum wires were fabricated by shallow implantation of Ga ions from a focused-ion-beam source into a modulation-doped AlxGa1-xAs/GaAs heterostructure. This type of implantation reduces crystal damage and keeps the implanted ions away from the two-dimensional electron gas. An electron mobility as high as 5.04×105 cm2/V s was obtained for 10-μm-long wires with an effective width of 0.152 μm, which is much higher than any previously reported values. The electron ballistic lengths in the wires were determined from measurements of the bend and transfer resistance and agreed well with the calculated elastic mean free paths. The transfer resistance versus magnetic field profiles exhibited electron focusing peaks associated with good specularity at the boundary.

AB - Quantum wires were fabricated by shallow implantation of Ga ions from a focused-ion-beam source into a modulation-doped AlxGa1-xAs/GaAs heterostructure. This type of implantation reduces crystal damage and keeps the implanted ions away from the two-dimensional electron gas. An electron mobility as high as 5.04×105 cm2/V s was obtained for 10-μm-long wires with an effective width of 0.152 μm, which is much higher than any previously reported values. The electron ballistic lengths in the wires were determined from measurements of the bend and transfer resistance and agreed well with the calculated elastic mean free paths. The transfer resistance versus magnetic field profiles exhibited electron focusing peaks associated with good specularity at the boundary.

UR - http://www.scopus.com/inward/record.url?scp=0004663373&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0004663373&partnerID=8YFLogxK

U2 - 10.1116/1.589350

DO - 10.1116/1.589350

M3 - Article

AN - SCOPUS:0004663373

SN - 1071-1023

VL - 15

SP - 1657

EP - 1660

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 5

ER -

Ga focused-ion-beam shallow-implanted quantum wires

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