Ga focused-ion-beam shallow-implanted quantum wires

M. Itoh, T. Saku, Y. Hirayama, S. Tarucha

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Quantum wires were fabricated by shallow implantation of Ga ions from a focused-ion-beam source into a modulation-doped AlxGa1-xAs/GaAs heterostructure. This type of implantation reduces crystal damage and keeps the implanted ions away from the two-dimensional electron gas. An electron mobility as high as 5.04×105 cm2/V s was obtained for 10-μm-long wires with an effective width of 0.152 μm, which is much higher than any previously reported values. The electron ballistic lengths in the wires were determined from measurements of the bend and transfer resistance and agreed well with the calculated elastic mean free paths. The transfer resistance versus magnetic field profiles exhibited electron focusing peaks associated with good specularity at the boundary.

Original languageEnglish
Pages (from-to)1657-1660
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume15
Issue number5
DOIs
Publication statusPublished - 1997
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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