Abstract
Gallium-doped zinc oxide (ZnO:Ga) transparent conducting films were prepared by the helicon-wave-excited plasma sputtering (HWPS) method. The films exhibited a dominant [0001]-oriented growth with a small full width at half maximum of the (0002) ZnO diffraction peak (0.28 degrees). A high optical transmittance greater than 80% was achieved in the wavelength range between 400 and 1600 nm, because the HWPS method essentially does not damage the film surface.: The results indicate that CdS-free Cu(In, Ga)Se2-based solar cells may be fabricated by sputtering ZnO:Ga directly on the Cu(In, Ga)Se2 layer using the HWPS method.
Original language | English |
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Pages (from-to) | 1109-1111 |
Number of pages | 3 |
Journal | Physica Status Solidi (C) Current Topics in Solid State Physics |
Volume | 6 |
Issue number | 5 |
DOIs | |
Publication status | Published - 2009 Sep 30 |
Event | 16th International Conference on Ternary and Multinary Compounds, ICTMC16 - Berlin, Germany Duration: 2008 Sep 15 → 2008 Sep 19 |
ASJC Scopus subject areas
- Condensed Matter Physics