Future high density memory with vertical structured device technology

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

For the past thirty years, the downscaling has been the guiding principle in the field of High-density semiconductor memories. However, recently, the limit of planar bulk MOSFETs is becoming apparent. Therefore, in order to extend the scalability of memory technology to the nano-scale generation, a new device structure is necessary. From the viewpoint, I will discuss future High density Memory with Vertical structured device technology.

Original languageEnglish
Title of host publicationICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Pages1051-1054
Number of pages4
DOIs
Publication statusPublished - 2010 Dec 1
Event2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China
Duration: 2010 Nov 12010 Nov 4

Publication series

NameICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Other

Other2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology
CountryChina
CityShanghai
Period10/11/110/11/4

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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