Fundamentals of Magnetoresistance Effects

Research output: Chapter in Book/Report/Conference proceedingChapter

1 Citation (Scopus)

Abstract

Giant magnetoresistance (GMR) effect is the most fundamental phenomenon in the field of spintronics. This chapter starts with a brief explanation of the conventional MR in ferromagnetic materials that had been known before the discovery of GMR. Here, it is noted that the word of GMR means a giant magnetoresistance (MR) effect, and also contains a giant tunnel magnetoresistance (TMR) effect (once called the tunneltype GMR), a colossal magnetoresistance (CMR) effect observed in magnetic oxides, and further different types of giant MR effects in a broad sense. However, GMR normally concerns a giant MR effect observed in "metallic systems" composed of ferromagnetic and nonferromagnetic metals in a nanometer scale. The metallic systems are discussed here. GMR in metallic superlattices is caused by spin-dependent scattering of conduction electrons at the interface. The principle and the recent progress of TMR studies are reviewed.

Original languageEnglish
Title of host publicationSpintronics for Next Generation Innovative Devices
Publisherwiley
Pages1-20
Number of pages20
ISBN (Electronic)9781118751886
ISBN (Print)9781118751886
DOIs
Publication statusPublished - 2016 Jan 8

Keywords

  • Giant magnetoresistance effect
  • Granular systems
  • Tunnel magnetoresistance effect
  • Tunneling

ASJC Scopus subject areas

  • Engineering(all)
  • Materials Science(all)

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  • Cite this

    Takanashi, K. (2016). Fundamentals of Magnetoresistance Effects. In Spintronics for Next Generation Innovative Devices (pp. 1-20). wiley. https://doi.org/10.1002/9781118751886.ch1