Fundamental study on ferroelectric data storage with the density above 1 Tbit/inch2 using congruent lithium tantalate

Yasuo Cho; Yoshiomi Hiranaga; Kenjiro Fujimoto; Yasuo Wagatsuma; Atsushi Onoe

doi:10.1080/10584580490458810

Fundamental study on ferroelectric data storage with the density above 1 Tbit/inch2 using congruent lithium tantalate

Yasuo Cho, Yoshiomi Hiranaga, Kenjiro Fujimoto, Yasuo Wagatsuma, Atsushi Onoe

Information Devices Division

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Ferroelectrics have created considerable interest as promising storage media. In this paper, an investigation for ultra high-density ferroelectric data storage based on scanning nonlinear dielectric microscopy (SNDM) was carried out. For the purpose of obtaining the fundamental knowledge of high-density ferroelectric data storage, several experiments of nano-domain formation in lithium tantalate (LiTaO₃) single crystal were conducted. As a result, domain dot array with areal density of 1.5 Tbit/inch² was written in congruent LiTaO₃ (CLT). We also found that quite fast nano second domain switching was possible by reducing a sample thickness even in CLT with a lot of Li vacancy defects which played a role of pinning sites against domain wall movement.

Original language	English
Pages (from-to)	77-81
Number of pages	5
Journal	Integrated Ferroelectrics
Volume	61
DOIs	https://doi.org/10.1080/10584580490458810
Publication status	Published - 2004 Dec 1

Keywords

Data storage
Lithium tantalate
Nanodomain engineering
Scanning nonlinear dielectric microscopy

ASJC Scopus subject areas

Electrical and Electronic Engineering
Physics and Astronomy (miscellaneous)
Condensed Matter Physics
Electronic, Optical and Magnetic Materials

Access to Document

10.1080/10584580490458810

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@article{9462c5c15378415d8e7d28e4e126d3fc,

title = "Fundamental study on ferroelectric data storage with the density above 1 Tbit/inch2 using congruent lithium tantalate",

abstract = "Ferroelectrics have created considerable interest as promising storage media. In this paper, an investigation for ultra high-density ferroelectric data storage based on scanning nonlinear dielectric microscopy (SNDM) was carried out. For the purpose of obtaining the fundamental knowledge of high-density ferroelectric data storage, several experiments of nano-domain formation in lithium tantalate (LiTaO3) single crystal were conducted. As a result, domain dot array with areal density of 1.5 Tbit/inch2 was written in congruent LiTaO3 (CLT). We also found that quite fast nano second domain switching was possible by reducing a sample thickness even in CLT with a lot of Li vacancy defects which played a role of pinning sites against domain wall movement.",

keywords = "Data storage, Lithium tantalate, Nanodomain engineering, Scanning nonlinear dielectric microscopy",

author = "Yasuo Cho and Yoshiomi Hiranaga and Kenjiro Fujimoto and Yasuo Wagatsuma and Atsushi Onoe",

year = "2004",

month = dec,

day = "1",

doi = "10.1080/10584580490458810",

language = "English",

volume = "61",

pages = "77--81",

journal = "Integrated Ferroelectrics",

issn = "1058-4587",

publisher = "Taylor and Francis Ltd.",

}

TY - JOUR

T1 - Fundamental study on ferroelectric data storage with the density above 1 Tbit/inch2 using congruent lithium tantalate

AU - Cho, Yasuo

AU - Hiranaga, Yoshiomi

AU - Fujimoto, Kenjiro

AU - Wagatsuma, Yasuo

AU - Onoe, Atsushi

PY - 2004/12/1

Y1 - 2004/12/1

N2 - Ferroelectrics have created considerable interest as promising storage media. In this paper, an investigation for ultra high-density ferroelectric data storage based on scanning nonlinear dielectric microscopy (SNDM) was carried out. For the purpose of obtaining the fundamental knowledge of high-density ferroelectric data storage, several experiments of nano-domain formation in lithium tantalate (LiTaO3) single crystal were conducted. As a result, domain dot array with areal density of 1.5 Tbit/inch2 was written in congruent LiTaO3 (CLT). We also found that quite fast nano second domain switching was possible by reducing a sample thickness even in CLT with a lot of Li vacancy defects which played a role of pinning sites against domain wall movement.

AB - Ferroelectrics have created considerable interest as promising storage media. In this paper, an investigation for ultra high-density ferroelectric data storage based on scanning nonlinear dielectric microscopy (SNDM) was carried out. For the purpose of obtaining the fundamental knowledge of high-density ferroelectric data storage, several experiments of nano-domain formation in lithium tantalate (LiTaO3) single crystal were conducted. As a result, domain dot array with areal density of 1.5 Tbit/inch2 was written in congruent LiTaO3 (CLT). We also found that quite fast nano second domain switching was possible by reducing a sample thickness even in CLT with a lot of Li vacancy defects which played a role of pinning sites against domain wall movement.

KW - Data storage

KW - Lithium tantalate

KW - Nanodomain engineering

KW - Scanning nonlinear dielectric microscopy

UR - http://www.scopus.com/inward/record.url?scp=33745729355&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33745729355&partnerID=8YFLogxK

U2 - 10.1080/10584580490458810

DO - 10.1080/10584580490458810

M3 - Article

AN - SCOPUS:33745729355

VL - 61

SP - 77

EP - 81

JO - Integrated Ferroelectrics

JF - Integrated Ferroelectrics

SN - 1058-4587

ER -