TY - GEN
T1 - Fundamental origin of excellent low-noise property in 3D Si-MOSFETs - Impact of charge-centroid in the channel due to quantum effect on 1/f noise ∼
AU - Feng, W.
AU - Hettiarachchi, R.
AU - Lee, Y.
AU - Sato, S.
AU - Kakushima, K.
AU - Sato, M.
AU - Fukuda, K.
AU - Niwa, M.
AU - Yamabe, K.
AU - Shiraishi, K.
AU - Iwai, H.
AU - Ohmori, K.
PY - 2011
Y1 - 2011
N2 - We fabricated Si nanowire (NW) nFETs, and used them to experimentally demonstrate the superior noise properties of 3D MOSFETs. By carefully comparing the NWFETs with planar FETs, we found that it was critical to control the location of the centroid of the electron density in the inversion channel in order to obtain a noise spectral density with low magnitude. Self-consistent calculations of the Schrödinger and Poisson equations clearly reveal the advantages of NWFETs in electron distribution due to quantum confinement, specifically in the small gate-overdrive (V g-V t) condition. Moreover, by increasing V d, the range where the NWFET exhibits superior noise properties to a planar FET can be extended to larger V g-V t because the effective V g near the drain is reduced.
AB - We fabricated Si nanowire (NW) nFETs, and used them to experimentally demonstrate the superior noise properties of 3D MOSFETs. By carefully comparing the NWFETs with planar FETs, we found that it was critical to control the location of the centroid of the electron density in the inversion channel in order to obtain a noise spectral density with low magnitude. Self-consistent calculations of the Schrödinger and Poisson equations clearly reveal the advantages of NWFETs in electron distribution due to quantum confinement, specifically in the small gate-overdrive (V g-V t) condition. Moreover, by increasing V d, the range where the NWFET exhibits superior noise properties to a planar FET can be extended to larger V g-V t because the effective V g near the drain is reduced.
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U2 - 10.1109/IEDM.2011.6131627
DO - 10.1109/IEDM.2011.6131627
M3 - Conference contribution
AN - SCOPUS:84863033906
SN - 9781457705052
T3 - Technical Digest - International Electron Devices Meeting, IEDM
SP - 27.7.1-27.7.4
BT - 2011 International Electron Devices Meeting, IEDM 2011
T2 - 2011 IEEE International Electron Devices Meeting, IEDM 2011
Y2 - 5 December 2011 through 7 December 2011
ER -