Fundamental origin of excellent low-noise property in 3D Si-MOSFETs - Impact of charge-centroid in the channel due to quantum effect on 1/f noise ∼

W. Feng, R. Hettiarachchi, Y. Lee, S. Sato, K. Kakushima, M. Sato, K. Fukuda, M. Niwa, K. Yamabe, K. Shiraishi, H. Iwai, K. Ohmori

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

We fabricated Si nanowire (NW) nFETs, and used them to experimentally demonstrate the superior noise properties of 3D MOSFETs. By carefully comparing the NWFETs with planar FETs, we found that it was critical to control the location of the centroid of the electron density in the inversion channel in order to obtain a noise spectral density with low magnitude. Self-consistent calculations of the Schrödinger and Poisson equations clearly reveal the advantages of NWFETs in electron distribution due to quantum confinement, specifically in the small gate-overdrive (V g-V t) condition. Moreover, by increasing V d, the range where the NWFET exhibits superior noise properties to a planar FET can be extended to larger V g-V t because the effective V g near the drain is reduced.

Original languageEnglish
Title of host publication2011 International Electron Devices Meeting, IEDM 2011
Pages27.7.1-27.7.4
DOIs
Publication statusPublished - 2011
Event2011 IEEE International Electron Devices Meeting, IEDM 2011 - Washington, DC, United States
Duration: 2011 Dec 52011 Dec 7

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other2011 IEEE International Electron Devices Meeting, IEDM 2011
CountryUnited States
CityWashington, DC
Period11/12/511/12/7

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Fundamental origin of excellent low-noise property in 3D Si-MOSFETs - Impact of charge-centroid in the channel due to quantum effect on 1/f noise ∼'. Together they form a unique fingerprint.

Cite this