Fully parallel 6T-2MTJ nonvolatile TCAM with single-transistor-based self match-line discharge control

Research output: Chapter in Book/Report/Conference proceedingConference contribution

58 Citations (Scopus)

Abstract

A six-MOS-transistor/two-MTJ-device (6T-2MTJ)-based cell circuit with an autonomous leakage-current control mechanism is proposed and fabricated for a fully parallel nonvolatile TCAM. A diode-connected nMOS transistor is inserted into each cell for match-line discharge control, which enables bit-parallel equality-search operation more than 144 bits. Since each match line is divided into three segments, the activity rate of cells is reduced to 2.8%. This almost eliminates leakage power while maintaining comparable search energy of 1.04 fJ/bit/search in comparison with a CMOS-based TCAM.

Original languageEnglish
Title of host publication2011 Symposium on VLSI Circuits, VLSIC 2011 - Digest of Technical Papers
Pages298-299
Number of pages2
Publication statusPublished - 2011 Sep 16
Event2011 Symposium on VLSI Circuits, VLSIC 2011 - Kyoto, Japan
Duration: 2011 Jun 152011 Jun 17

Publication series

NameIEEE Symposium on VLSI Circuits, Digest of Technical Papers

Other

Other2011 Symposium on VLSI Circuits, VLSIC 2011
CountryJapan
CityKyoto
Period11/6/1511/6/17

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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