Fully integrated active magnetic probe for high-definition near-field measurement

Satoshi Aoyama, Masahiro Yamaguchi, Shoji Kawahito

Research output: Chapter in Book/Report/Conference proceedingConference contribution

11 Citations (Scopus)

Abstract

In order to diagnose the topical EMI problem in ICs, a fully integrated active magnetic probe has been developed in SOI-CMOS technology. A 2-turn differential coil, differential amplifiers, a differential to single-ended converter, a output buffer and bias circuits are all integrated in a single-chip. Measurement result shows that it gains the high e-field suppression ratio of 38.0dB at 50MHz. Furthermore, the first 2D magnetic distribution map has been drawn by the active probe. The obtained image is finer than that of a shielded loop coil and it can prove an active probe to be a pragmatic diagnosis tool.

Original languageEnglish
Title of host publication2006 IEEE International Symposium on Electromagnetic Compatibility, EMC 2006
Pages426-429
Number of pages4
Publication statusPublished - 2006 Dec 1
Event2006 IEEE International Symposium on Electromagnetic Compatibility, EMC 2006 - Portland, OR, United States
Duration: 2006 Aug 142006 Aug 18

Publication series

NameIEEE International Symposium on Electromagnetic Compatibility
Volume2
ISSN (Print)1077-4076

Other

Other2006 IEEE International Symposium on Electromagnetic Compatibility, EMC 2006
CountryUnited States
CityPortland, OR
Period06/8/1406/8/18

Keywords

  • Active probe
  • EMC
  • EMI
  • Magnetic probe
  • Near-field measurement
  • Noise mapping
  • SOI-CMOS

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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