Fully engineered homoepitaxial zinc oxide nanopillar array for near-surface light wave manipulation

J. Volk; A. Hkansson; H. T. Miyazaki; T. Nagata; J. Shimizu; T. Chikyow

doi:10.1063/1.2924282

Fully engineered homoepitaxial zinc oxide nanopillar array for near-surface light wave manipulation

J. Volk, A. Hkansson, H. T. Miyazaki, T. Nagata, J. Shimizu, T. Chikyow

Advanced Institute for Materials Research (AIMR)

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

We report accurate light wave manipulation by means of an inverse designed homoepitaxial ZnO nanopillar array. Our proof-of-concept structure was optimized for focusing a near-surface light beam which propagates in a free-space parallel to the metal top surface. The on-purpose positioned and perpendicularly aligned vertical ZnO nanopillars were fabricated by homoepitaxial chemical growth technique. The obtained focal distance of 28 μm as well as the light intensity distribution pattern was verified by three-dimensional finite-difference time-domain method. The demonstrated approach can provide inter- and intrachip optical connections in the next generation ZnO nanowire-based integrated photonic devices.

Original language	English
Article number	183114
Journal	Applied Physics Letters
Volume	92
Issue number	18
DOIs	https://doi.org/10.1063/1.2924282
Publication status	Published - 2008

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2924282

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abstract = "We report accurate light wave manipulation by means of an inverse designed homoepitaxial ZnO nanopillar array. Our proof-of-concept structure was optimized for focusing a near-surface light beam which propagates in a free-space parallel to the metal top surface. The on-purpose positioned and perpendicularly aligned vertical ZnO nanopillars were fabricated by homoepitaxial chemical growth technique. The obtained focal distance of 28 μm as well as the light intensity distribution pattern was verified by three-dimensional finite-difference time-domain method. The demonstrated approach can provide inter- and intrachip optical connections in the next generation ZnO nanowire-based integrated photonic devices.",

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AU - Volk, J.

AU - Hkansson, A.

AU - Miyazaki, H. T.

AU - Nagata, T.

AU - Shimizu, J.

AU - Chikyow, T.

PY - 2008

Y1 - 2008

N2 - We report accurate light wave manipulation by means of an inverse designed homoepitaxial ZnO nanopillar array. Our proof-of-concept structure was optimized for focusing a near-surface light beam which propagates in a free-space parallel to the metal top surface. The on-purpose positioned and perpendicularly aligned vertical ZnO nanopillars were fabricated by homoepitaxial chemical growth technique. The obtained focal distance of 28 μm as well as the light intensity distribution pattern was verified by three-dimensional finite-difference time-domain method. The demonstrated approach can provide inter- and intrachip optical connections in the next generation ZnO nanowire-based integrated photonic devices.

AB - We report accurate light wave manipulation by means of an inverse designed homoepitaxial ZnO nanopillar array. Our proof-of-concept structure was optimized for focusing a near-surface light beam which propagates in a free-space parallel to the metal top surface. The on-purpose positioned and perpendicularly aligned vertical ZnO nanopillars were fabricated by homoepitaxial chemical growth technique. The obtained focal distance of 28 μm as well as the light intensity distribution pattern was verified by three-dimensional finite-difference time-domain method. The demonstrated approach can provide inter- and intrachip optical connections in the next generation ZnO nanowire-based integrated photonic devices.

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Fully engineered homoepitaxial zinc oxide nanopillar array for near-surface light wave manipulation

Abstract

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