Fullerene (C60) adsorption on Si surfaces

T. Sakurai, X. D. Wang, T. Hashizume, Y. Nishina, H. Shinohara, Y. Saito

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    11 Citations (Scopus)

    Abstract

    Field ion-scanning tunneling microscopy (FI-STM) was employed to characterize the adsorption behavior of fullerenes on the Si(111)7 × 7 and Si(100)2 × 1 surfaces. On the Si(111)7 × 7 surface, C60 adsorbs preferentially on the faulted half of the 7 × 7 unit and stays still without rotation at room temperature, implying a reasonably strong interaction with the Si substrate. The C60 molecules reside stably also at room temperature without rotation on the Si(100) surface. For the first and second layers on the Si(100) surface, only local ordering of square and quasi-hexagonal patterns was observed. The orderly Stranski-Krastanov mode island formation with hexagonal packing was observed above the third layer on the Si(100)2 × 1 surface.

    Original languageEnglish
    Pages (from-to)281-285
    Number of pages5
    JournalApplied Surface Science
    Volume67
    Issue number1-4
    DOIs
    Publication statusPublished - 1993 Apr 2

    ASJC Scopus subject areas

    • Chemistry(all)
    • Condensed Matter Physics
    • Physics and Astronomy(all)
    • Surfaces and Interfaces
    • Surfaces, Coatings and Films

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