Fullerene (C60) adsorption and films growth on the (√3x√3) and (3x3) surface of 6H SiC(0001)

L. Li, Y. Hasegawa, H. Shinohara, T. Sakurai

    Research output: Contribution to journalArticlepeer-review

    Abstract

    Scanning tunneling microscopy (STM) was used to study the C60 adsorption on the Si rich (3x3) and C rich (√3x√3) surface of 6H-SiC(0001). At room temperature, triangular or hexagonal islands commensurating to the substrate structure at submonlayer coverages were observed. One of the interesting observations was the nucleation of the second layer of the C60 molecules even at submonlayer coverages. On the (3x3) surface, multilayer growth of C60 with the close-packed fcc(111) structure was observed: while on the (√3x√3) surface, for coverage higher than 1 ML, disordered surface morphology was observed. Epitaxial growth of SiC was also achieved using C60 as carbon source on 6H-SiC(0001) surfaces.

    Original languageEnglish
    Pages (from-to)C5-173-C5-177
    JournalJournal De Physique. IV : JP
    Volume6
    Issue number5
    DOIs
    Publication statusPublished - 1996

    ASJC Scopus subject areas

    • Physics and Astronomy(all)

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