Fullerene (C60) adsorption and films growth on the (√3x√3) and (3x3) surface of 6H SiC(0001)

L. Li, Y. Hasegawa, H. Shinohara, T. Sakurai

Research output: Contribution to journalArticlepeer-review


Scanning tunneling microscopy (STM) was used to study the C60 adsorption on the Si rich (3x3) and C rich (√3x√3) surface of 6H-SiC(0001). At room temperature, triangular or hexagonal islands commensurating to the substrate structure at submonlayer coverages were observed. One of the interesting observations was the nucleation of the second layer of the C60 molecules even at submonlayer coverages. On the (3x3) surface, multilayer growth of C60 with the close-packed fcc(111) structure was observed: while on the (√3x√3) surface, for coverage higher than 1 ML, disordered surface morphology was observed. Epitaxial growth of SiC was also achieved using C60 as carbon source on 6H-SiC(0001) surfaces.

Original languageEnglish
Pages (from-to)C5-173-C5-177
JournalJournal De Physique. IV : JP
Issue number5
Publication statusPublished - 1996
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)


Dive into the research topics of 'Fullerene (C60) adsorption and films growth on the (√3x√3) and (3x3) surface of 6H SiC(0001)'. Together they form a unique fingerprint.

Cite this