Fullerene (C 60 ) adsorption and films growth on the (√3×√3) and (3×3) surface of 6H SiC(0001)

L. Li, Y. Hasegawa, H. Shinohara, Toshio Sakurai

    Research output: Contribution to journalConference article

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    Abstract

    Scanning tunneling microscopy (STM) was used to study the C 60 adsorption on the Si rich (3×3) and C rich (√3×√3) surface of 6H-SiC(0001). At room temperature, triangular or hexagonal islands commensurating to the substrate structure at submonolayer coverages were observed. One of the interesting observations was the nucleation of the second layer of the C 60 molecules even at submonolayer coverages. On the (3×3) surface, multilayer growth of C 60 with the close-packed fcc(111) structure was observed: while on the (√3×√3) surface, for coverage higher than 1 ML, disordered surface morphology was observed. Epitaxial growth of SiC was also achieved using C 60 as carbon source on 6H-SiC(0001) surfaces.

    Original languageEnglish
    Pages (from-to)173-177
    Number of pages5
    JournalJournal De Physique. IV : JP
    Volume6
    Issue number5
    Publication statusPublished - 1996 Sep 1
    EventProceedings of the 1996 43rd International Field Emission Symposium, IFES'96 - Moscow, Russia
    Duration: 1996 Jul 141996 Jul 19

    ASJC Scopus subject areas

    • Physics and Astronomy(all)

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