TY - GEN
T1 - Full SiC power module with advanced structure and its solar inverter application
AU - Hinata, Yuichiro
AU - Horio, Masafumi
AU - Ikeda, Yoshinari
AU - Yamada, Ryuji
AU - Takahashi, Yoshikazu
PY - 2013/7/1
Y1 - 2013/7/1
N2 - This paper describes advanced power module structure for high power and high frequency application with solar inverter system. This advanced power modules is applied full SiC semiconductor which has SiC MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) and SiC SBD (Schottky Barrier Diode). This full SiC power module structure realizes high reliability with low thermal impedance by using these new three technology, i) power circuit board which has copper pins connected to power devices, ii) advanced ceramic insulated substrate that enables high heat dissipation is utilized to reduce thermal impedance and iii) full molded package achieves high temperature operation and high reliability. The power cycling test at high temperature (200deg.C), electrical characteristics and inverter system efficiency of this full SiC power module were evaluated and compared with conventional Si power module. The results showed that the power cycling lifetime has x50 capability, electrical characteristics has low loss and low turn-off surge voltage, and 99.0% of efficiency at solar inverter system.
AB - This paper describes advanced power module structure for high power and high frequency application with solar inverter system. This advanced power modules is applied full SiC semiconductor which has SiC MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) and SiC SBD (Schottky Barrier Diode). This full SiC power module structure realizes high reliability with low thermal impedance by using these new three technology, i) power circuit board which has copper pins connected to power devices, ii) advanced ceramic insulated substrate that enables high heat dissipation is utilized to reduce thermal impedance and iii) full molded package achieves high temperature operation and high reliability. The power cycling test at high temperature (200deg.C), electrical characteristics and inverter system efficiency of this full SiC power module were evaluated and compared with conventional Si power module. The results showed that the power cycling lifetime has x50 capability, electrical characteristics has low loss and low turn-off surge voltage, and 99.0% of efficiency at solar inverter system.
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U2 - 10.1109/APEC.2013.6520272
DO - 10.1109/APEC.2013.6520272
M3 - Conference contribution
AN - SCOPUS:84879398567
SN - 9781467343541
T3 - Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC
SP - 604
EP - 607
BT - 2013 28th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2013
T2 - 28th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2013
Y2 - 17 March 2013 through 21 March 2013
ER -