TY - JOUR
T1 - Full Energy Spectra of Interface State Densities for n- and p-type MoS2 Field-Effect Transistors
AU - Fang, Nan
AU - Toyoda, Satoshi
AU - Taniguchi, Takashi
AU - Watanabe, Kenji
AU - Nagashio, Kosuke
N1 - Funding Information:
N.F. was supported by a Grant-in-Aid for JSPS Research Fellows from the JSPS KAKENHI. This research was partly supported by The Canon Foundation, the JSPS Core-to-Core Program, A. Advanced Research Networks, the JSPS A3 Foresight Program, and JSPS KAKENHI Grant Numbers JP16H04343, JP19H00755, and 19K21956, Japan.
Publisher Copyright:
© 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
PY - 2019/12/1
Y1 - 2019/12/1
N2 - 2D materials are promising to overcome the scaling limit of Si field-effect transistors (FETs). However, the insulator/2D channel interface severely degrades the performance of 2D FETs, and the origin of the degradation remains largely unexplored. Here, the full energy spectra of the interface state densities (Dit) are presented for both n- and p- MoS2 FETs, based on the comprehensive and systematic studies, i.e., full rage of channel thickness and various gate stack structures with h-BN as well as high-k oxides. For n-MoS2, Dit around the mid-gap is drastically reduced to 5 × 1011 cm−2 eV−1 for the heterostructure FET with h-BN from 5 × 1012 cm−2 eV−1 for the high-k top-gate. On the other hand, Dit remains high, ≈1013 cm−2 eV−1, even for the heterostructure FET for p-MoS2. The systematic study elucidates that the strain induced externally through the substrate surface roughness and high-k deposition process is the origin for the interface degradation on conduction band side, while sulfur-vacancy-induced defect states dominate the interface degradation on valance band side. The present understanding of the interface properties provides the key to further improving the performance of 2D FETs.
AB - 2D materials are promising to overcome the scaling limit of Si field-effect transistors (FETs). However, the insulator/2D channel interface severely degrades the performance of 2D FETs, and the origin of the degradation remains largely unexplored. Here, the full energy spectra of the interface state densities (Dit) are presented for both n- and p- MoS2 FETs, based on the comprehensive and systematic studies, i.e., full rage of channel thickness and various gate stack structures with h-BN as well as high-k oxides. For n-MoS2, Dit around the mid-gap is drastically reduced to 5 × 1011 cm−2 eV−1 for the heterostructure FET with h-BN from 5 × 1012 cm−2 eV−1 for the high-k top-gate. On the other hand, Dit remains high, ≈1013 cm−2 eV−1, even for the heterostructure FET for p-MoS2. The systematic study elucidates that the strain induced externally through the substrate surface roughness and high-k deposition process is the origin for the interface degradation on conduction band side, while sulfur-vacancy-induced defect states dominate the interface degradation on valance band side. The present understanding of the interface properties provides the key to further improving the performance of 2D FETs.
KW - defect states
KW - heterostructure
KW - quantum capacitance
KW - two-dimensional material
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U2 - 10.1002/adfm.201904465
DO - 10.1002/adfm.201904465
M3 - Article
AN - SCOPUS:85073986086
VL - 29
JO - Advanced Functional Materials
JF - Advanced Functional Materials
SN - 1616-301X
IS - 49
M1 - 1904465
ER -