FTIR-ATR, AFM, and UHV-STM characterization of the interface of SiO 2 /Si(001) induced by thick SiO 2 formation

Kenji Namba, Tadahiro Komeda, Yasushiro Nishioka

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

Ultrahigh vacuum type scanning tunnelling microscopic (UHV-STM) and atomic force microscopic (AFM) measurements showed the existence of long periodical mound and valley shape (∼ 1 μm-period, ∼ 1.5 nm-height) at SiO 2 /Si(001) interface after removing native oxide. This shape was observed at the interface even after the formation of a thick (∼ 150 nm) thermal oxide or a chemical oxide made in HNO 3 solution. Fourier transform infrared spectroscopic (FTIR) measurements of the interfaces indicated the atomic scale roughness of the interface.

Original languageEnglish
Pages (from-to)198-201
Number of pages4
JournalApplied Surface Science
Volume117-118
DOIs
Publication statusPublished - 1997 Jun 2
Externally publishedYes

Keywords

  • FTIR
  • Microroughness
  • STM
  • Sacrificing oxidation
  • Si(001)
  • Step structures

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Fingerprint Dive into the research topics of 'FTIR-ATR, AFM, and UHV-STM characterization of the interface of SiO <sub>2</sub> /Si(001) induced by thick SiO <sub>2</sub> formation'. Together they form a unique fingerprint.

Cite this