Frustrated Lewis Pair Chelation as a Vehicle for Low-Temperature Semiconductor Element and Polymer Deposition

Alvaro A. Omaña, Rachel K. Green, Ryo Kobayashi, Yingjie He, Evan R. Antoniuk, Michael J. Ferguson, Yuqiao Zhou, Jonathan G.C. Veinot, Takeaki Iwamoto, Alex Brown, Eric Rivard

Research output: Contribution to journalArticlepeer-review

Abstract

The stabilization of silicon(II) and germanium(II) dihydrides by an intramolecular Frustrated Lewis Pair (FLP) ligand, PB, iPr2P(C6H4)BCy2 (Cy=cyclohexyl) is reported. The resulting hydride complexes [PB{SiH2}] and [PB{GeH2}] are indefinitely stable at room temperature, yet can deposit films of silicon and germanium, respectively, upon mild thermolysis in solution. Hallmarks of this work include: 1) the ability to recycle the FLP phosphine-borane ligand (PB) after element deposition, and 2) the single-source precursor [PB{SiH2}] deposits Si films at a record low temperature from solution (110 °C). The dialkylsilicon(II) adduct [PB{SiMe2}] was also prepared, and shown to release poly(dimethylsilane) [SiMe2]n upon heating. Overall, this study introduces a “closed loop” deposition strategy for semiconductors that steers materials science away from the use of harsh reagents or high temperatures.

Original languageEnglish
Pages (from-to)228-231
Number of pages4
JournalAngewandte Chemie - International Edition
Volume60
Issue number1
DOIs
Publication statusPublished - 2021 Jan 4

Keywords

  • element deposition
  • frustrated Lewis pairs
  • group 14 elements
  • hydrides
  • inorganic bonding

ASJC Scopus subject areas

  • Catalysis
  • Chemistry(all)

Fingerprint Dive into the research topics of 'Frustrated Lewis Pair Chelation as a Vehicle for Low-Temperature Semiconductor Element and Polymer Deposition'. Together they form a unique fingerprint.

Cite this